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NTSV2080CTG

Onsemi

NTSV2080CTG by Onsemi

NTSV2080CTG by Onsemi is a Schottky rectifier diode with 80V peak reverse voltage and 10A output current. It has a common cathode configuration, matte tin terminal finish, and operates b/w -40 to 150 °C. Ideal for efficiency applications due to its low forward voltage of 0.98V and high non-repetitive peak forward current of 100A.

Median Price

$0.493

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,250 parts In-Stock

1+ parts

-

100+ parts

$0.475

1k+ parts

$0.395

10k+ parts

$0.352

10,250

-

$0.475

$0.395

$0.352

DigiKey

USA . 10,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.590

10k+ parts

-

10,250

-

-

$0.590

-

Verical

USA . 5,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.493

10k+ parts

$0.440

5,550

-

-

$0.493

$0.440

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,166 parts In-Stock

1+ parts

$0.370

100+ parts

-

1k+ parts

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1,166

$0.370

-

-

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Vyrian

USA . 1,924 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

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10k+ parts

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1,924

$0.390

-

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-

Chip Stock

USA . 63,000 parts In-Stock

1+ parts

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63,000

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 896 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

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10k+ parts

-

896

$0.351

-

-

-

Corohmni

South Africa . 85 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

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85

$0.390

-

-

-

Continental Prestige Electronics

USA . 10,250 parts In-Stock

1+ parts

-

100+ parts

$0.470

1k+ parts

-

10k+ parts

-

10,250

-

$0.470

-

-

Problanco Electronics

Mexico . 8,204 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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8,204

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-

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TANS Electronics

Latvia . 5,826 parts In-Stock

1+ parts

-

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5,826

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SupplyDigital Components

Austria . 2,318 parts In-Stock

1+ parts

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100+ parts

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2,318

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UHIMA Technologies

Türkiye . 841 parts In-Stock

1+ parts

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841

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Kulean Microsystems

USA . 485 parts In-Stock

1+ parts

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485

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Futuretech Components

Singapore . 100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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100

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Kepictronics

USA . 100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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100

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-

Overview

Enhance the efficiency of your electronic devices with the NTSV2080CTG diode by Onsemi. Crafted from high-quality materials, this common cathode diode offers superior performance and reliability. Whether you're looking to improve power conversion or protect circuits from overvoltage, this product is a versatile solution for a wide range of applications. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 80V, the NTSV2080CTG ensures optimal functionality even in extreme conditions. Trust Onsemi for top-notch diodes that deliver value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuits and efficient current flow.

Maximum Reverse Current: 600 uA

Low reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Compact shape for easy installation and space-saving design.

Maximum Operating Temperature: 150 °C

Suitable for high temperature environments, providing reliable performance.

Technology: SCHOTTKY

Schottky technology allows for fast switching and low forward voltage drop, increasing efficiency.

Maximum Output Current: 10 A

High output current capability for powering various electronic devices and circuits.

Maximum Repetitive Peak Reverse Voltage: 80 V

Suitable for applications requiring high reverse voltage protection.

Technical Specifications

Diodes & Rectifiers NTSV2080CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

80 V

Maximum Reverse Current:

600 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSV2080CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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