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NTSV30100CTH

Onsemi

NTSV30100CTH by Onsemi

NTSV30100CTH by Onsemi is a Schottky rectifier diode with 2 elements and a max output current of 15A. It has a common cathode configuration, package style in flange mount, and can handle up to 100V peak reverse voltage. Ideal for applications requiring high efficiency, operating b/w -40 °C to 150°C temperature range.

Median Price

$0.530

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 72,900 parts In-Stock

1+ parts

-

100+ parts

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$0.580

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72,900

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$0.580

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Verical

USA . 72,000 parts In-Stock

1+ parts

-

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-

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$0.480

10k+ parts

$0.428

72,000

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-

$0.480

$0.428

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,615 parts In-Stock

1+ parts

$0.302

100+ parts

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1,615

$0.302

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Digiode

USA . 1,089 parts In-Stock

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$0.360

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1,089

$0.360

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.302

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164

$0.302

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Corphita

USA . 1,449 parts In-Stock

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$0.341

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1,449

$0.341

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Continental Prestige Electronics

USA . 72,900 parts In-Stock

1+ parts

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100+ parts

$0.302

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72,900

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$0.302

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Problanco Electronics

Mexico . 7,474 parts In-Stock

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7,474

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A-Z Elektronik GmbH

Germany . 5,028 parts In-Stock

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5,028

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Kulean Microsystems

USA . 4,569 parts In-Stock

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4,569

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TANS Electronics

Latvia . 3,182 parts In-Stock

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3,182

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SupplyDigital Components

Austria . 2,663 parts In-Stock

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2,663

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 622 parts In-Stock

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622

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Discover the NTSV30100CTH by Onsemi, a top-quality common cathode rectifier diode that guarantees efficiency in various applications. With a maximum output current of 15A and a maximum repetitive peak reverse voltage of 100V, this Schottky technology diode offers unparalleled performance and reliability. Whether you're looking to enhance power supply designs or improve circuit efficiency, the NTSV30100CTH is the ideal solution. Trust Onsemi's expertise and innovation to deliver cutting-edge diodes that exceed expectations. Experience the value and benefits of superior quality with the NTSV30100CTH.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, ensuring durability and reliability.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy circuit design and the presence of 2 elements increases efficiency.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without any performance degradation, suitable for a variety of environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making them ideal for efficiency applications.

Maximum Output Current: 15 A

Capable of handling high current output, suitable for demanding applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching capabilities, increasing efficiency and performance.

Technical Specifications

Diodes & Rectifiers NTSV30100CTH attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSV30100CTH Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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