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NTSV30100CTG

Onsemi

NTSV30100CTG by Onsemi

NTSV30100CTG by Onsemi is a Schottky rectifier diode with a max output current of 15A and a max repetitive peak reverse voltage of 100V. It has a common cathode configuration, suitable for efficiency applications with an operating temperature range from -40°C to 150°C.

Median Price

$0.515

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 810,639 parts In-Stock

1+ parts

-

100+ parts

$0.478

1k+ parts

$0.396

10k+ parts

$0.353

810,639

-

$0.478

$0.396

$0.353

DigiKey

USA . 810,639 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.600

10k+ parts

-

810,639

-

-

$0.600

-

Farnell

UK . 810,439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.590

10k+ parts

-

810,439

-

-

$0.590

-

Verical

USA . 586,974 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.495

10k+ parts

$0.442

586,974

-

-

$0.495

$0.442

Future Electronics

Canada . 1,050 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.465

10k+ parts

$0.430

1,050

-

$0.515

$0.465

$0.430

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 88 parts In-Stock

1+ parts

$0.538

100+ parts

-

1k+ parts

-

10k+ parts

-

88

$0.538

-

-

-

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.693

100+ parts

-

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-

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15

$0.693

-

-

-

Vyrian

USA . 607,640 parts In-Stock

1+ parts

-

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-

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10k+ parts

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607,640

-

-

-

-

Chip Stock

USA . 48,000 parts In-Stock

1+ parts

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-

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48,000

-

-

-

-

IBS Electronics

USA . 750 parts In-Stock

1+ parts

-

100+ parts

$0.624

1k+ parts

$0.585

10k+ parts

$0.559

750

-

$0.624

$0.585

$0.559

NAC Semi

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 607,856 parts In-Stock

1+ parts

$0.438

100+ parts

-

1k+ parts

-

10k+ parts

-

607,856

$0.438

-

-

-

Corphita

USA . 1,045 parts In-Stock

1+ parts

$0.509

100+ parts

-

1k+ parts

-

10k+ parts

-

1,045

$0.509

-

-

-

Corohmni

South Africa . 424 parts In-Stock

1+ parts

$0.515

100+ parts

-

1k+ parts

-

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424

$0.515

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.679

100+ parts

-

1k+ parts

$0.652

10k+ parts

-

50

$0.679

-

$0.652

-

Microchip USA

USA . 3,560 parts In-Stock

1+ parts

$3.510

100+ parts

-

1k+ parts

-

10k+ parts

-

3,560

$3.510

-

-

-

Continental Prestige Electronics

USA . 834,829 parts In-Stock

1+ parts

-

100+ parts

$0.457

1k+ parts

-

10k+ parts

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834,829

-

$0.457

-

-

Lixinc

USA . 11,524 parts In-Stock

1+ parts

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11,524

-

-

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Kulean Microsystems

USA . 7,686 parts In-Stock

1+ parts

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7,686

-

-

-

-

SupplyDigital Components

Austria . 6,303 parts In-Stock

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6,303

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TANS Electronics

Latvia . 5,296 parts In-Stock

1+ parts

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5,296

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-

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A-Z Elektronik GmbH

Germany . 5,270 parts In-Stock

1+ parts

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5,270

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-

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-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

-

-

-

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Problanco Electronics

Mexico . 3,299 parts In-Stock

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3,299

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-

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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-

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Perfect Parts

USA . 1,372 parts In-Stock

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1,372

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UHIMA Technologies

Türkiye . 548 parts In-Stock

1+ parts

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548

-

-

-

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Futuretech Components

Singapore . 503 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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503

-

-

-

-

Overview

Enhance your electronic designs with the NTSV30100CTG by Onsemi. With a reputation for producing high-quality diodes and rectifiers, Onsemi delivers a product that exceeds industry standards. Designed for efficiency applications, this common cathode diode offers a maximum forward voltage of 0.82 V and a maximum output current of 15 A. Its Schottky technology ensures reliable performance, while its matte tin terminal finish provides durability. Trust Onsemi to provide innovative solutions for your electronic needs. Unlock the potential of your projects with the NTSV30100CTG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode durable and resistant to external elements, ensuring a longer lifespan for the product.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient current flow and low voltage drop, making it suitable for applications requiring high efficiency.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this diode can withstand higher temperatures without degrading performance, making it reliable in various industrial environments.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching times compared to standard silicon diodes, making them ideal for high-frequency applications requiring efficiency and speed.

Technical Specifications

Diodes & Rectifiers NTSV30100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.82 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSV30100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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