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NTSV20U100CTG

Onsemi

NTSV20U100CTG by Onsemi

NTSV20U100CTG by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 10A, and common cathode configuration. It operates b/w -40 to 150°C, has a max reverse voltage of 100V, and is ideal for efficiency applications.

Median Price

$0.541

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,843 parts In-Stock

1+ parts

$0.935

100+ parts

$0.493

1k+ parts

$0.371

10k+ parts

-

2,843

$0.935

$0.493

$0.371

-

Rochester

USA . 191,959 parts In-Stock

1+ parts

-

100+ parts

$0.474

1k+ parts

$0.393

10k+ parts

$0.351

191,959

-

$0.474

$0.393

$0.351

DigiKey

USA . 191,959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.590

10k+ parts

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191,959

-

-

$0.590

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Verical

USA . 107,100 parts In-Stock

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-

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$0.492

10k+ parts

$0.439

107,100

-

-

$0.492

$0.439

Flip Electronics (Authorized)

USA . 150 parts In-Stock

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-

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150

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Distributors (In-Stock)

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Digiode

USA . 1,659 parts In-Stock

1+ parts

$0.445

100+ parts

-

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1,659

$0.445

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.548

100+ parts

-

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100

$0.548

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DigiKey Marketplace

USA . 196,159 parts In-Stock

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196,159

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Vyrian

USA . 144,757 parts In-Stock

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144,757

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Chip Stock

USA . 25,000 parts In-Stock

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Flip Electronics

USA . 150 parts In-Stock

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150

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,251 parts In-Stock

1+ parts

$0.148

100+ parts

-

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10k+ parts

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4,251

$0.148

-

-

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Ampacity Inc.

Singapore . 144,872 parts In-Stock

1+ parts

$0.367

100+ parts

-

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144,872

$0.367

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Semicontronic

India . 137,202 parts In-Stock

1+ parts

$0.367

100+ parts

$0.358

1k+ parts

$0.356

10k+ parts

-

137,202

$0.367

$0.358

$0.356

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Corphita

USA . 2,474 parts In-Stock

1+ parts

$0.421

100+ parts

-

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2,474

$0.421

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Corohmni

South Africa . 228 parts In-Stock

1+ parts

$0.432

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228

$0.432

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Argo Parts USA

USA . 2,646 parts In-Stock

1+ parts

$0.548

100+ parts

-

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$0.531

2,646

$0.548

-

-

$0.531

Bastille Electronics

Australia . 301 parts In-Stock

1+ parts

$0.548

100+ parts

$0.521

1k+ parts

$0.495

10k+ parts

$0.488

301

$0.548

$0.521

$0.495

$0.488

Microchip USA

USA . 145 parts In-Stock

1+ parts

$6.890

100+ parts

-

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145

$6.890

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Continental Prestige Electronics

USA . 196,116 parts In-Stock

1+ parts

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$0.486

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196,116

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$0.486

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Lixinc

USA . 15,554 parts In-Stock

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15,554

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Problanco Electronics

Mexico . 7,822 parts In-Stock

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TANS Electronics

Latvia . 6,564 parts In-Stock

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Kulean Microsystems

USA . 4,998 parts In-Stock

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Perfect Parts

USA . 4,099 parts In-Stock

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SupplyDigital Components

Austria . 3,877 parts In-Stock

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UHIMA Technologies

Türkiye . 896 parts In-Stock

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896

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GreenTree Electronics

Israel . 50 parts In-Stock

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Kepictronics

USA . 40 parts In-Stock

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40

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Overview

Discover the power and efficiency of the NTSV20U100CTG diode by Onsemi. With a manufacturer known for their high-quality products, this diode offers superior performance in rectifying applications. Whether you're working on power supplies, converters, or inverters, this diode's common cathode configuration and Schottky technology ensure reliable operation. Experience the benefits of reduced forward voltage, high output current capacity, and a wide operating temperature range. Trust Onsemi to deliver value and innovation with the NTSV20U100CTG diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliable performance for long-term use.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for efficient circuit design and improved voltage regulation.

Maximum Reverse Current: 800 uA

Low reverse current ensures minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy installation and space-saving design.

No. of Terminals: 3

Three terminals provide flexibility in connection options for various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for convenient mounting and secure installation.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where energy conservation is important.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stable performance in different environments.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in extreme conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and reliable contact for long-term use.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces complexity in circuit design.

Case Connection: CATHODE

Cathode case connection simplifies circuit layout and improves overall performance.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power.

Maximum Forward Voltage (VF): 0.98 V

Low forward voltage drop allows for minimal power loss and efficient operation.

Maximum Output Current: 10 A

High output current capacity makes it suitable for applications requiring high power.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low power consumption.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure connections and ease of soldering.

No. of Elements: 2

Dual elements allow for improved efficiency and better performance in various applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

High peak reverse voltage rating ensures reliable performance in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 100 A

High peak forward current capacity makes it suitable for applications requiring high power.

Diode Element Material: SILICON

Silicon diode element material ensures reliable operation and long service life.

Technical Specifications

Diodes & Rectifiers NTSV20U100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.98 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

800 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSV20U100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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