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NTSJ20U100CTG

Onsemi

NTSJ20U100CTG by Onsemi

NTSJ20U100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -40 to 150 °C, has a max VF of 0.68V, and VRRM of 100V. Ideal for efficiency applications due to its isolated case connection and through-hole terminal form.

Median Price

$0.592

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,656 parts In-Stock

1+ parts

-

100+ parts

$0.581

1k+ parts

$0.482

10k+ parts

$0.430

2,656

-

$0.581

$0.482

$0.430

Verical

USA . 1,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.603

10k+ parts

$0.538

1,786

-

-

$0.603

$0.538

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 358 parts In-Stock

1+ parts

$0.453

100+ parts

-

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358

$0.453

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Vyrian

USA . 8,086 parts In-Stock

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8,086

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 3,686 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

3,686

$0.090

-

$0.061

$0.061

Corphita

USA . 540 parts In-Stock

1+ parts

$0.429

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-

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540

$0.429

-

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Corohmni

South Africa . 262 parts In-Stock

1+ parts

$0.477

100+ parts

-

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-

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262

$0.477

-

-

-

Component Stockers USA

USA . 2,777 parts In-Stock

1+ parts

$0.490

100+ parts

$0.460

1k+ parts

$0.420

10k+ parts

-

2,777

$0.490

$0.460

$0.420

-

AZTECH Wire

Italy . 724 parts In-Stock

1+ parts

$14.840

100+ parts

-

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724

$14.840

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 10,844 parts In-Stock

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Problanco Electronics

Mexico . 8,116 parts In-Stock

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TANS Electronics

Latvia . 7,941 parts In-Stock

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7,941

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Kulean Microsystems

USA . 7,321 parts In-Stock

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7,321

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SupplyDigital Components

Austria . 4,670 parts In-Stock

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4,670

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 2,656 parts In-Stock

1+ parts

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100+ parts

$0.801

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2,656

-

$0.801

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Perfect Parts

USA . 1,288 parts In-Stock

1+ parts

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1,288

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UHIMA Technologies

Türkiye . 140 parts In-Stock

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140

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Overview

Enhance the efficiency of your electronic devices with the NTSJ20U100CTG by Onsemi. Crafted with precision and quality in mind, this rectifier diode offers superior performance and reliability. Whether you're working on power supplies, inverters, or other high-efficiency applications, this component is designed to meet your needs. With a maximum output current of 10A and a maximum repetitive peak reverse voltage of 100V, this Schottky diode provides optimal functionality while ensuring long-term durability. Trust in Onsemi's expertise and elevate your projects with the NTSJ20U100CTG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, ensuring reliable performance over time.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient coordination and control of the current flow in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode can withstand elevated temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The diode can operate efficiently even at low temperatures as low as -40 °C, ensuring reliability in various environmental conditions.

Maximum Output Current: 10 A

Capable of handling a maximum output current of 10 A, making it suitable for applications that require high current flow.

Technology: SCHOTTKY

Schottky technology offers low forward voltage drop and fast switching speeds, improving the efficiency and performance of the diode.

Technical Specifications

Diodes & Rectifiers NTSJ20U100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ20U100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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