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NTSJ30120CTG

Onsemi

NTSJ30120CTG by Onsemi

NTSJ30120CTG by Onsemi is a Schottky rectifier diode with common cathode configuration and 2 elements. It has a max forward voltage of 0.76V and output current of 15A, suitable for applications requiring high efficiency. With a max operating temperature of 150°C and package style as flange mount, it is ideal for various electronic circuits.

Median Price

$0.921

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

$0.887

1k+ parts

$0.737

10k+ parts

$0.657

1,200

-

$0.887

$0.737

$0.657

DigiKey

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.110

10k+ parts

-

1,200

-

-

$1.110

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Verical

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.921

10k+ parts

-

1,200

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$0.921

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Flip Electronics (Authorized)

USA . 483 parts In-Stock

1+ parts

-

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-

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483

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Distributors (In-Stock)

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Digiode

USA . 1,588 parts In-Stock

1+ parts

$0.690

100+ parts

-

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1,588

$0.690

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.781

100+ parts

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870

$0.781

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Chip Stock

USA . 16,000 parts In-Stock

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16,000

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Vyrian

USA . 8,250 parts In-Stock

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8,250

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Flip Electronics

USA . 483 parts In-Stock

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483

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.150

100+ parts

$0.137

1k+ parts

$0.123

10k+ parts

-

1,000

$0.150

$0.137

$0.123

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Ampacity Inc.

Singapore . 436 parts In-Stock

1+ parts

$0.620

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436

$0.620

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Corphita

USA . 602 parts In-Stock

1+ parts

$0.653

100+ parts

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602

$0.653

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Argo Parts USA

USA . 1,668 parts In-Stock

1+ parts

$0.689

100+ parts

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10k+ parts

$0.669

1,668

$0.689

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-

$0.669

Corohmni

South Africa . 360 parts In-Stock

1+ parts

$0.726

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360

$0.726

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.765

100+ parts

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1k+ parts

$0.735

10k+ parts

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2,000

$0.765

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$0.735

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Microchip USA

USA . 453 parts In-Stock

1+ parts

$4.550

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453

$4.550

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AZTECH Wire

Italy . 411 parts In-Stock

1+ parts

$18.480

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411

$18.480

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TANS Electronics

Latvia . 7,897 parts In-Stock

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7,897

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SupplyDigital Components

Austria . 5,238 parts In-Stock

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5,238

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Problanco Electronics

Mexico . 3,264 parts In-Stock

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3,264

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Kulean Microsystems

USA . 2,521 parts In-Stock

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2,521

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Continental Prestige Electronics

USA . 1,200 parts In-Stock

1+ parts

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$0.646

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1,200

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$0.646

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Perfect Parts

USA . 1,007 parts In-Stock

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1,007

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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790

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Overview

Upgrade your efficiency with the NTSJ30120CTG by Onsemi. This high-quality diode rectifier offers unparalleled performance and reliability, making it an essential component for a wide range of applications. With a maximum operating temperature of 150°C and a maximum output current of 15A, this Schottky technology diode provides superior value and benefits to our customers. Trust in Onsemi's reputation for excellence and choose the NTSJ30120CTG for all your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring longevity and reliability.

Maximum Operating Temperature: 150 °C

Allows for high temperature operation, making it suitable for a wide range of applications.

Maximum Output Current: 15 A

Can handle high current loads, making it suitable for power electronics applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speeds, improving efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 120 V

Withstands high reverse voltage, protecting the circuit from voltage spikes and surges.

Technical Specifications

Diodes & Rectifiers NTSJ30120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.76 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ30120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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