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NTSJ30U100CTG

Onsemi

NTSJ30U100CTG by Onsemi

NTSJ30U100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 15A. It operates b/w -40 to 150 °C, ideal for efficiency applications requiring a max reverse voltage of 100V. The package style is flange mount with through-hole terminals and a rectangular shape made of plastic/epoxy material.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 55,000 parts In-Stock

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Vyrian

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AZTECH Wire

Italy . 214 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 15,688 parts In-Stock

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Problanco Electronics

Mexico . 4,852 parts In-Stock

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TANS Electronics

Latvia . 4,157 parts In-Stock

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SupplyDigital Components

Austria . 3,947 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 2,530 parts In-Stock

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UHIMA Technologies

Türkiye . 935 parts In-Stock

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Corphita

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South Africa . 361 parts In-Stock

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Overview

Upgrade your efficiency with the NTSJ30U100CTG by Onsemi! This high-quality diode rectifier offers superior performance and reliability, thanks to Onsemi's reputation for excellence. Ideal for a wide range of applications, this product provides a maximum output current of 15A and a maximum repetitive peak reverse voltage of 100V. Trust Onsemi to deliver innovative technology and exceptional value with the NTSJ30U100CTG.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Maximum Reverse Current - 675 uA

Low reverse current ensures energy efficiency and reliability.

Maximum Operating Temperature - 150 °C

Allows the diode to operate at high temperatures without performance degradation.

Diode Type - RECTIFIER DIODE

Specifically designed for converting AC to DC, making it ideal for efficiency applications.

Maximum Forward Voltage (VF) - 0.8 V

Low forward voltage drop leads to energy efficiency and reduced power loss.

Maximum Output Current - 15 A

High output current capability makes it suitable for various high-power applications.

Technology - SCHOTTKY

Schottky technology enables fast switching speed and low forward voltage drop.

Technical Specifications

Diodes & Rectifiers NTSJ30U100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

160 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

675 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ30U100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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