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NTSJ40120CTG

Onsemi

NTSJ40120CTG by Onsemi

NTSJ40120CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 20A. It operates b/w -40 to 150 °C, has a max forward voltage of 0.71V, and is ideal for applications requiring high efficiency.

Median Price

$0.859

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$0.859

1k+ parts

$0.713

10k+ parts

$0.635

400

-

$0.859

$0.713

$0.635

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,287 parts In-Stock

1+ parts

$0.669

100+ parts

-

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-

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-

2,287

$0.669

-

-

-

Chip Stock

USA . 46,000 parts In-Stock

1+ parts

-

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46,000

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-

-

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Vyrian

USA . 5,045 parts In-Stock

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5,045

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,472 parts In-Stock

1+ parts

$0.634

100+ parts

-

1k+ parts

-

10k+ parts

-

2,472

$0.634

-

-

-

Corohmni

South Africa . 160 parts In-Stock

1+ parts

$0.704

100+ parts

-

1k+ parts

-

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-

160

$0.704

-

-

-

Microchip USA

USA . 457 parts In-Stock

1+ parts

$4.420

100+ parts

-

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457

$4.420

-

-

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AZTECH Wire

Italy . 302 parts In-Stock

1+ parts

$12.480

100+ parts

-

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302

$12.480

-

-

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Perfect Parts

USA . 31,469 parts In-Stock

1+ parts

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31,469

-

-

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TANS Electronics

Latvia . 6,784 parts In-Stock

1+ parts

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6,784

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-

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Kulean Microsystems

USA . 6,760 parts In-Stock

1+ parts

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6,760

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SupplyDigital Components

Austria . 4,992 parts In-Stock

1+ parts

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4,992

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A-Z Elektronik GmbH

Germany . 4,922 parts In-Stock

1+ parts

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100+ parts

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4,922

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Problanco Electronics

Mexico . 4,120 parts In-Stock

1+ parts

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4,120

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Kepictronics

USA . 200 parts In-Stock

1+ parts

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200

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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26

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Overview

Boost efficiency and reliability with the NTSJ40120CTG by Onsemi. Crafted with precision and quality, this rectifier diode offers unmatched performance in a variety of applications. From power supplies to automotive electronics, this product delivers consistent results thanks to its Schottky technology and high output current of 20A. With a maximum operating temperature of 150 °C and a common cathode configuration, customers can trust in the durability and longevity of this diode. Elevate your projects with the NTSJ40120CTG and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making it a reliable choice for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and effective control in circuits, enhancing overall performance.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into circuit designs, offering convenience during installation.

Maximum Output Current: 20 A

With a maximum output current of 20 A, this product can handle high current loads effectively, making it suitable for power applications.

Technology: SCHOTTKY

The Schottky technology used in this diode ensures low forward voltage drop and fast switching characteristics, improving efficiency and reducing power loss.

Technical Specifications

Diodes & Rectifiers NTSJ40120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ40120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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