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NTSJ20100CTG

Onsemi

NTSJ20100CTG by Onsemi

NTSJ20100CTG by Onsemi is a Schottky rectifier diode with 2 elements, max output current of 10A, and common cathode configuration. It operates b/w -40 to 150 °C, has a max reverse voltage of 100V, and is ideal for efficiency applications.

Median Price

$0.716

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 223 parts In-Stock

1+ parts

-

100+ parts

$0.716

1k+ parts

$0.594

10k+ parts

$0.529

223

-

$0.716

$0.594

$0.529

Distributors (In-Stock)

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Digiode

USA . 764 parts In-Stock

1+ parts

$0.556

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764

$0.556

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Chip Stock

USA . 79,000 parts In-Stock

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Vyrian

USA . 8,135 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.071

100+ parts

$0.065

1k+ parts

$0.058

10k+ parts

-

40

$0.071

$0.065

$0.058

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Corphita

USA . 2,287 parts In-Stock

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$0.526

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2,287

$0.526

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Corohmni

South Africa . 322 parts In-Stock

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$0.585

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322

$0.585

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Component Stockers USA

USA . 499 parts In-Stock

1+ parts

$0.590

100+ parts

$0.550

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499

$0.590

$0.550

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Perfect Parts

USA . 33,148 parts In-Stock

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RC Electronics

USA . 7,290 parts In-Stock

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Kepictronics

USA . 6,150 parts In-Stock

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Kulean Microsystems

USA . 5,419 parts In-Stock

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Problanco Electronics

Mexico . 3,116 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 1,429 parts In-Stock

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UHIMA Technologies

Türkiye . 383 parts In-Stock

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TANS Electronics

Latvia . 337 parts In-Stock

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337

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Overview

Unleash the power of efficiency with the NTSJ20100CTG by Onsemi. This top-of-the-line diode & rectifier boasts superior quality and performance, thanks to its cutting-edge technology and exceptional manufacturing standards. Ideal for a wide range of applications, this product offers maximum output current of 10A and a maximum repetitive peak reverse voltage of 100V. Say goodbye to inefficiency and hello to optimized performance with the NTSJ20100CTG - the perfect solution for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 800 uA

Low reverse current ensures efficient operation and helps in reducing power loss.

Package Shape: RECTANGULAR

Allows for easy installation and integration into existing systems.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification tasks, ensuring reliable and efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.83 V

Low forward voltage drop minimizes power dissipation and enhances overall efficiency.

Maximum Output Current: 10 A

High output current rating allows for handling of larger loads, making it versatile for various applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers NTSJ20100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.83 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

800 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ20100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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