Loading...

NTSJ20120CTG

Onsemi

NTSJ20120CTG by Onsemi

NTSJ20120CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -40 to 150 °C, has a max forward voltage of 0.72V, and is commonly used for efficiency applications.

Median Price

$0.764

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,330 parts In-Stock

1+ parts

-

100+ parts

$0.737

1k+ parts

$0.612

10k+ parts

$0.545

6,330

-

$0.737

$0.612

$0.545

DigiKey

USA . 6,330 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.920

10k+ parts

-

6,330

-

-

$0.920

-

Verical

USA . 2,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.764

10k+ parts

$0.682

2,800

-

-

$0.764

$0.682

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 235 parts In-Stock

1+ parts

$0.577

100+ parts

-

1k+ parts

-

10k+ parts

-

235

$0.577

-

-

-

Chip Stock

USA . 63,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

63,000

-

-

-

-

Vyrian

USA . 11,233 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,233

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 6,190 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

-

6,190

$0.520

-

-

-

Corphita

USA . 721 parts In-Stock

1+ parts

$0.546

100+ parts

-

1k+ parts

-

10k+ parts

-

721

$0.546

-

-

-

Corohmni

South Africa . 197 parts In-Stock

1+ parts

$0.607

100+ parts

-

1k+ parts

-

10k+ parts

-

197

$0.607

-

-

-

Continental Prestige Electronics

USA . 2 parts In-Stock

1+ parts

$1.100

100+ parts

$0.727

1k+ parts

$0.507

10k+ parts

-

2

$1.100

$0.727

$0.507

-

Microchip USA

USA . 309 parts In-Stock

1+ parts

$3.770

100+ parts

-

1k+ parts

-

10k+ parts

-

309

$3.770

-

-

-

AZTECH Wire

Italy . 316 parts In-Stock

1+ parts

$12.130

100+ parts

-

1k+ parts

-

10k+ parts

-

316

$12.130

-

-

-

Problanco Electronics

Mexico . 7,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,358

-

-

-

-

TANS Electronics

Latvia . 4,492 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,492

-

-

-

-

Kulean Microsystems

USA . 3,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,395

-

-

-

-

SupplyDigital Components

Austria . 2,999 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,999

-

-

-

-

UHIMA Technologies

Türkiye . 900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

900

-

-

-

-

Perfect Parts

USA . 746 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

746

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Upgrade your efficiency with the NTSJ20120CTG by Onsemi. This dual-element rectifier diode offers superior performance and reliability, thanks to Onsemi's top-notch manufacturing standards. Ideal for a variety of applications, this product ensures maximum output current of 10A and a forward voltage of just 0.72V. With a temperature range from -40 °C to 150°C, this rectifier diode is designed to deliver optimal results in any environment. Trust Onsemi for quality components that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring longevity and reliability in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and having 2 elements increases efficiency and performance.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and secure in different electronic devices and systems.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options and flexibility in circuit designs.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments without risk of overheating or damage.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature conditions, making it suitable for a wide range of operating environments.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability, ensuring reliable connections in circuits.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, making them ideal for efficient power management.

Technical Specifications

Diodes & Rectifiers NTSJ20120CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.72 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

120 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

120 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ20120CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 12