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NTSJ2080CTG

Onsemi

NTSJ2080CTG by Onsemi

NTSJ2080CTG by Onsemi is a Schottky rectifier diode with 80V peak reverse voltage and 10A output current. It has a common cathode configuration, operating temperature range of -40 to 150 °C, and is ideal for applications requiring high efficiency. The package style is flange mount with a plastic/epoxy body material.

Median Price

$0.726

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 44 parts In-Stock

1+ parts

$0.039

100+ parts

$0.039

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$0.039

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$0.039

44

$0.039

$0.039

$0.039

$0.039

Rochester

USA . 64,900 parts In-Stock

1+ parts

-

100+ parts

$0.713

1k+ parts

$0.592

10k+ parts

$0.528

64,900

-

$0.713

$0.592

$0.528

DigiKey

USA . 64,900 parts In-Stock

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$0.890

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64,900

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$0.890

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Verical

USA . 32,500 parts In-Stock

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$0.740

10k+ parts

$0.660

32,500

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-

$0.740

$0.660

Distributors (In-Stock)

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Digiode

USA . 115 parts In-Stock

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$0.037

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$0.037

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Chip Stock

USA . 19,000 parts In-Stock

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Vyrian

USA . 7,869 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,300 parts In-Stock

1+ parts

$0.035

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2,300

$0.035

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Corohmni

South Africa . 304 parts In-Stock

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$0.039

100+ parts

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304

$0.039

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Andel Nordic

Denmark . 1,890 parts In-Stock

1+ parts

$0.880

100+ parts

-

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$0.613

10k+ parts

$0.613

1,890

$0.880

-

$0.613

$0.613

Microchip USA

USA . 5,609 parts In-Stock

1+ parts

$3.640

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5,609

$3.640

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AZTECH Wire

Italy . 920 parts In-Stock

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$20.030

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920

$20.030

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Continental Prestige Electronics

USA . 64,900 parts In-Stock

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$0.564

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64,900

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$0.564

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Problanco Electronics

Mexico . 7,176 parts In-Stock

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7,176

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Kulean Microsystems

USA . 6,379 parts In-Stock

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SupplyDigital Components

Austria . 5,179 parts In-Stock

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TANS Electronics

Latvia . 1,251 parts In-Stock

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 80 parts In-Stock

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Overview

Discover the superior performance of the NTSJ2080CTG diode by Onsemi, a leading manufacturer in the industry. With a common cathode configuration and advanced Schottky technology, this diode offers unmatched efficiency for a wide range of applications. From its high maximum output current of 10 A to its low forward voltage of just 0.68 V, this diode delivers reliable performance in any environment. Trust Onsemi to provide quality products that exceed expectations, and experience the benefits of using the NTSJ2080CTG in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration simplifies circuit design and 2 elements allow for higher efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuits.

No. of Terminals: 3

Having 3 terminals provides flexibility in connection options.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure installation and heat dissipation.

Application: EFFICIENCY

Designed for efficiency, making it suitable for applications where power conversion is crucial.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, increasing the reliability of the diodes.

Minimum Operating Temperature: -40 °C

Can operate at low temperatures, ensuring functionality in various environments.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents electrical interference.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC.

Maximum Forward Voltage (VF): 0.68 V

Low forward voltage drop ensures minimal power loss during operation.

Maximum Output Current: 10 A

High maximum output current rating allows for handling of heavy loads.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low power dissipation.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy installation on PCBs.

No. of Elements: 2

Having 2 elements provides redundancy and higher efficiency in the circuit.

Maximum Repetitive Peak Reverse Voltage: 80 V

High maximum repetitive peak reverse voltage rating ensures durability and reliability.

Maximum Non Repetitive Peak Forward Current: 150 A

High maximum non repetitive peak forward current allows for handling of surge currents.

Diode Element Material: SILICON

Silicon diode element material offers good conductivity and reliability.

Technical Specifications

Diodes & Rectifiers NTSJ2080CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.68 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

80 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

NTSJ2080CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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