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NTS260ESFT3G

Onsemi

NTS260ESFT3G by Onsemi

NTS260ESFT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.65V and output current of 2A. It operates b/w -65°C to 175°C, has a peak reflow temperature of 260°C, and can handle up to 60V reverse voltage. Ideal for efficiency applications due to its low forward voltage drop and high output current capability.

Median Price

$0.134

Lifecycle Status

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Nova Conductors

Japan . 550 parts In-Stock

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Digiode

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Ampacity Inc.

Singapore . 29,637 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 4,473 parts In-Stock

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Corohmni

South Africa . 70 parts In-Stock

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Argo Parts USA

USA . 4,655 parts In-Stock

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Continental Prestige Electronics

USA . 2,655 parts In-Stock

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India . 29,920 parts In-Stock

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AZTECH Wire

Italy . 252 parts In-Stock

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Overview

Experience superior quality and reliability with the NTS260ESFT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge diodes and rectifiers that excel in efficiency applications. With a maximum output current of 2A and a maximum repetitive peak reverse voltage of 60V, this Schottky diode offers unparalleled performance. Whether you're looking to boost efficiency or enhance your electronic designs, the NTS260ESFT3G provides unmatched value and benefits, making it the ideal choice for all your application needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode durable and resistant to wear and tear.

Config: SINGLE

The single configuration simplifies the design and installation process for ease of use.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards.

Maximum Reverse Current: 12 uA

The low maximum reverse current ensures efficient operation and energy savings.

Package Shape: RECTANGULAR

The rectangular package shape allows for space-saving and efficient placement on PCBs.

No. of Terminals: 2

With only two terminals, this diode is easy to connect and integrate into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for compact designs.

Application: EFFICIENCY

Designed for efficiency, this diode is perfect for applications where power optimization is key.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures reliable performance in diverse environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for consistent operation in cold conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit connections for versatile use.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature protects the diode from damage during soldering.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure attachment to PCBs during assembly.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is suitable for converting AC to DC in power supply circuits.

Maximum Forward Voltage (VF): 0.65 V

The low forward voltage drop helps in minimizing power losses and increasing efficiency.

Maximum Output Current: 2 A

With a high maximum output current, this diode can handle heavy loads without overheating.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and reduced power losses for improved performance.

Terminal Form: FLAT

The flat terminal form ensures easy and secure connections during installation.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage allows for reliable operation in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 25 A

The high non-repetitive peak forward current rating ensures the diode can handle sudden surges of power without damage.

Diode Element Material: SILICON

Made of silicon, this diode offers high reliability and stable performance in various applications.

Technical Specifications

Diodes & Rectifiers NTS260ESFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS260ESFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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