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NTS245SFT1G

Onsemi

NTS245SFT1G by Onsemi

NTS245SFT1G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.63V. It operates b/w -65°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

Median Price

$0.181

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Arrow

USA . 799 parts In-Stock

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$0.345

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$0.155

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$0.092

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799

$0.345

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DigiKey

USA . 12,000 parts In-Stock

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$0.600

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$0.600

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Farnell

UK . 990 parts In-Stock

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$0.157

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$0.154

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990

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$0.157

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Verical

USA . 799 parts In-Stock

1+ parts

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$0.155

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$0.092

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799

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$0.155

$0.092

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Chip1Stop

Japan . 799 parts In-Stock

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$0.182

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$0.108

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799

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Element14

Singapore . 9 parts In-Stock

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$0.180

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$0.157

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$0.151

9

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$0.180

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$0.151

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.129

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$0.129

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Digiode

USA . 529 parts In-Stock

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$0.328

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529

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Chip Stock

USA . 25,718 parts In-Stock

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Flip Electronics

USA . 12,000 parts In-Stock

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Vyrian

USA . 5,001 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,591 parts In-Stock

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Aztec Data Supply Inc.

USA . 35 parts In-Stock

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$0.120

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35

$0.120

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Corohmni

South Africa . 381 parts In-Stock

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$0.124

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Ampacity Inc.

Singapore . 2,019 parts In-Stock

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$0.132

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Corphita

USA . 374 parts In-Stock

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$0.310

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374

$0.310

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Continental Prestige Electronics

USA . 58,774 parts In-Stock

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$0.135

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Kepictronics

USA . 33,604 parts In-Stock

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Lixinc

USA . 14,306 parts In-Stock

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TANS Electronics

Latvia . 7,730 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 4,014 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,866 parts In-Stock

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Kulean Microsystems

USA . 1,637 parts In-Stock

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Problanco Electronics

Mexico . 1,041 parts In-Stock

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Andel Nordic

Denmark . 879 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.126

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$0.120

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Overview

Experience unmatched efficiency and reliability with the NTS245SFT1G by Onsemi. As a leading manufacturer in the industry of Diodes & Rectifiers, Onsemi delivers top-notch quality products that are perfect for a wide range of applications. This SCHOTTKY technology rectifier diode offers a maximum output current of 2A and a maximum forward voltage of 0.63V, ensuring optimal performance in any project. Trust Onsemi to provide you with the best-in-class components that guarantee superior functionality and durability, making your projects a success every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Easily installed on a PCB, saving space and simplifying assembly processes.

Maximum Reverse Current: 90 uA

Ensures low power consumption and efficient operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for diverse operating environments.

Diode Type: RECTIFIER DIODE

Ideal for converting AC to DC current with high efficiency.

Maximum Forward Voltage (VF): 0.63 V

Low forward voltage drop results in minimal power loss.

Maximum Output Current: 2 A

Capable of handling high current loads, suitable for various applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, enhancing overall performance.

Technical Specifications

Diodes & Rectifiers NTS245SFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

90 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS245SFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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