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NTS260SFT3G

Onsemi

NTS260SFT3G by Onsemi

NTS260SFT3G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.65V. It operates b/w -65°C to 150°C, making it suitable for high-efficiency applications. With a reverse test voltage of 60V and surface mount configuration, it offers reliable performance in various electronic circuits.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,081 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.075

10k+ parts

$0.067

7,081

-

$0.090

$0.075

$0.067

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,372 parts In-Stock

1+ parts

$0.070

100+ parts

-

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1,372

$0.070

-

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Chip Stock

USA . 34,933 parts In-Stock

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34,933

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Vyrian

USA . 4,344 parts In-Stock

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4,344

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

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900

-

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,018 parts In-Stock

1+ parts

$0.060

100+ parts

-

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-

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-

2,018

$0.060

-

-

-

Ampacity Inc.

Singapore . 6,973 parts In-Stock

1+ parts

$0.063

100+ parts

-

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6,973

$0.063

-

-

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Semicontronic

India . 6,761 parts In-Stock

1+ parts

$0.063

100+ parts

$0.061

1k+ parts

$0.061

10k+ parts

-

6,761

$0.063

$0.061

$0.061

-

Corphita

USA . 2,328 parts In-Stock

1+ parts

$0.067

100+ parts

-

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2,328

$0.067

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Corohmni

South Africa . 299 parts In-Stock

1+ parts

$0.074

100+ parts

-

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299

$0.074

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.120

100+ parts

$0.109

1k+ parts

$0.098

10k+ parts

-

200

$0.120

$0.109

$0.098

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AZTECH Wire

Italy . 1,004 parts In-Stock

1+ parts

$9.970

100+ parts

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1,004

$9.970

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Kepictronics

USA . 51,000 parts In-Stock

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51,000

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Lixinc

USA . 14,957 parts In-Stock

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14,957

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TANS Electronics

Latvia . 6,424 parts In-Stock

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6,424

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Kulean Microsystems

USA . 5,327 parts In-Stock

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5,327

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Problanco Electronics

Mexico . 4,909 parts In-Stock

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4,909

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Continental Prestige Electronics

USA . 2,958 parts In-Stock

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2,958

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Argo Parts USA

USA . 2,228 parts In-Stock

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2,228

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SupplyDigital Components

Austria . 1,573 parts In-Stock

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1,573

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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94

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Overview

Upgrade your efficiency with the NTS260SFT3G by Onsemi. This Schottky rectifier diode offers top-notch quality and reliability, ensuring optimal performance in a variety of applications. With a maximum reverse voltage of 60V and a maximum output current of 2A, this diode is designed to deliver exceptional results while maintaining a low forward voltage of only 0.65V. Trust Onsemi's expertise in diodes and rectifiers to provide you with the value and benefits you need to succeed. Experience the difference with the NTS260SFT3G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Current: 50 uA

Low leakage current ensures efficient performance and energy savings.

Maximum Forward Voltage (VF): 0.65 V

Low forward voltage drop results in minimal power loss and efficient operation.

Maximum Output Current: 2 A

Capable of handling decent current levels for a variety of applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, ideal for high frequency and high efficiency applications.

Technical Specifications

Diodes & Rectifiers NTS260SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

NONE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS260SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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