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NTS245SFT3G

Onsemi

NTS245SFT3G by Onsemi

NTS245SFT3G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.63V. It operates b/w -65°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 20,000 parts In-Stock

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$0.110

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Mouser Electronics

USA . 18,635 parts In-Stock

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$0.081

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$0.081

Flip Electronics (Authorized)

USA . 10,000 parts In-Stock

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Nova Conductors

Japan . 31 parts In-Stock

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$0.115

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Flip Electronics

USA . 20,000 parts In-Stock

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Chip Stock

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Vyrian

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Digiode

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Ampacity Inc.

Singapore . 13,874 parts In-Stock

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$0.069

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Corohmni

South Africa . 258 parts In-Stock

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$0.081

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Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

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TANS Electronics

Latvia . 8,374 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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UHIMA Technologies

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Corphita

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Overview

Discover the NTS245SFT3G by Onsemi, a top-quality diode and rectifier that offers unparalleled efficiency in a compact package. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications where reliability and performance are key. With a maximum output current of 2A and a maximum forward voltage of 0.63V, this Schottky diode ensures optimal energy conversion while operating at temperatures ranging from -65 to 150°C. Experience the value and benefits of the NTS245SFT3G for yourself and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the diode lightweight and durable, suitable for a wide range of applications.

Config: SINGLE

The single configuration simplifies the circuit design and makes installation easier, reducing the chances of errors.

Surface Mount: YES

Being surface mountable, this diode can be easily integrated into compact and dense PCB designs, saving space and improving efficiency.

Maximum Reverse Current: 90 uA

The low reverse current ensures minimal power loss and improves overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and soldering on the PCB, making it convenient for manufacturing processes.

No. of Terminals: 2

With only 2 terminals, the diode is easy to handle and install, reducing complexity in circuit connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact designs where board real estate is limited.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power savings and performance are critical factors.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand heat stress and operate reliably in demanding environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range ensures the diode can function effectively in cold conditions, enhancing its versatility.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent solderability and corrosion resistance, ensuring a secure and reliable connection.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit configurations, making it suitable for a variety of setups.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of thermal damage during soldering, ensuring the diode's reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for efficient soldering without compromising the diode's performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.63 V

The low forward voltage drop across the diode results in minimal power loss and improved energy efficiency in the circuit.

Maximum Output Current: 2 A

Capable of handling up to 2 amps of output current, this diode is suitable for moderate power applications where reliability is key.

Technology: SCHOTTKY

Featuring Schottky technology, this diode offers fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Terminal Form: FLAT

The flat terminal form ensures easy and secure soldering connections, contributing to the overall reliability of the diode.

Maximum Repetitive Peak Reverse Voltage: 45 V

With a high repetitive peak reverse voltage rating, this diode can withstand voltage spikes and reverse polarity conditions without damage.

Maximum Non Repetitive Peak Forward Current: 50 A

The high non-repetitive peak forward current rating allows the diode to handle short-duration surges and transients, enhancing its robustness.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures reliable performance, high temperature tolerance, and compatibility with a wide range of applications.

Technical Specifications

Diodes & Rectifiers NTS245SFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.63 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

90 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS245SFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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