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NTS245ESFT3G

Onsemi

NTS245ESFT3G by Onsemi

NTS245ESFT3G by Onsemi is a Schottky rectifier diode with max output current of 2A and max repetitive peak reverse voltage of 45V. It operates b/w -65 to 175 °C, ideal for efficiency applications. This single-config diode has a small outline package style suitable for surface mount technology.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 857 parts In-Stock

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SupplyDigital Components

Austria . 3,463 parts In-Stock

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TANS Electronics

Latvia . 3,034 parts In-Stock

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Kulean Microsystems

USA . 1,942 parts In-Stock

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Corphita

USA . 1,621 parts In-Stock

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UHIMA Technologies

Türkiye . 758 parts In-Stock

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Problanco Electronics

Mexico . 677 parts In-Stock

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Corohmni

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Overview

Experience efficiency like never before with the NTS245ESFT3G by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality in every product they manufacture, and this diode rectifier is no exception. With a maximum output current of 2A and a maximum forward voltage of 0.62V, this SCHOTTKY technology diode offers unparalleled performance for a wide range of applications. From consumer electronics to industrial equipment, this small outline package delivers reliability and value that customers can trust. Say goodbye to inefficiency and hello to optimized performance with the NTS245ESFT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it suitable for a variety of applications.

Configuration: SINGLE

Single configuration makes it easier to integrate into electronic circuits and simplifies design.

Surface Mount: YES

Surface mounting capability allows for easy placement on PCBs and saves space in electronic devices.

Maximum Reverse Current: 50 uA

Low reverse current ensures efficient operation and prevents unnecessary power loss.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and mount the diode onto a circuit board.

Number of Terminals: 2

Having only two terminals simplifies the connection process, making it user-friendly.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where energy savings are crucial.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in various environmental conditions.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for operation in extreme cold environments.

Terminal Finish: Tin (Sn)

Tin terminal finish provides excellent conductivity and solderability for easy installation.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and connection options.

Diode Type: RECTIFIER DIODE

Rectifier diode is ideal for converting AC to DC and is commonly used in power supply circuits.

Maximum Forward Voltage (VF): 0.62 V

Low forward voltage drop ensures minimal power loss and efficient operation.

Maximum Output Current: 2 A

High output current rating allows the diode to handle large loads without overheating.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and low forward voltage drop for high efficiency.

Terminal Form: FLAT

Flat terminal form provides stable connection and easy soldering onto PCBs.

Maximum Repetitive Peak Reverse Voltage: 45 V

High reverse voltage rating ensures the diode can handle voltage spikes without damage.

Maximum Non-Repetitive Peak Forward Current: 50 A

High peak forward current rating allows the diode to withstand short-duration overload conditions.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability for long-term use.

Technical Specifications

Diodes & Rectifiers NTS245ESFT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.62 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

45 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NTS245ESFT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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