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NTS260ESFT1G

Onsemi

NTS260ESFT1G by Onsemi

NTS260ESFT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.65V and output current of 2A. It operates b/w -65°C to 175°C, making it suitable for high-efficiency applications. With a peak repetitive reverse voltage of 60V, it is ideal for surface mount designs requiring low power consumption.

Median Price

$0.108

Lifecycle Status

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In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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$0.108

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Chip Stock

USA . 34,229 parts In-Stock

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Vyrian

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Netsource Technology, Inc.

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J2 Sourcing AB

Sweden . 3,519 parts In-Stock

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Digiode

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Ampacity Inc.

Singapore . 14,526 parts In-Stock

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$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 2,313 parts In-Stock

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$0.010

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Corohmni

South Africa . 243 parts In-Stock

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$0.104

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Argo Parts USA

USA . 3,089 parts In-Stock

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$0.108

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Advanced Electronics

New Zealand . 67 parts In-Stock

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Continental Prestige Electronics

USA . 45 parts In-Stock

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$0.360

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$0.170

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Semicontronic

India . 985 parts In-Stock

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$1.010

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$0.985

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$0.980

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985

$1.010

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AZTECH Wire

Italy . 720 parts In-Stock

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$19.632

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Kepictronics

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Lixinc

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Kulean Microsystems

USA . 7,002 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,842 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Benley Electronics

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TANS Electronics

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Corphita

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

Türkiye . 608 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.106

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$0.103

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Overview

Discover the NTS260ESFT1G by Onsemi, a high-quality Schottky rectifier diode designed for efficiency applications. With a maximum forward voltage of 0.65V and an output current of 2A, this diode offers exceptional performance and reliability. Onsemi, a reputable manufacturer known for their cutting-edge technology, brings you a product that exceeds industry standards. Whether you're looking to improve power management or enhance circuit efficiency, the NTS260ESFT1G is the perfect solution. Trust Onsemi to deliver value, benefits, and advantages that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the diode, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the circuit design and installation process, making it easier to integrate this diode into electronic systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient mounting on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Current: 12 uA

With a low maximum reverse current, this diode offers efficient performance and helps minimize power loss in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape enables easy placement and orientation on the PCB, ensuring proper alignment and connectivity.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces the risk of wiring errors, enhancing the overall reliability of the diode.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices or densely populated circuit boards.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where energy conservation and optimal performance are critical.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures, ensuring reliable performance in challenging environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range allows this diode to function effectively in cold conditions, making it versatile for various applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and resistance to oxidation, ensuring stable electrical connections and long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, allowing for multiple connection options to meet specific requirements.

Maximum Time At Peak Reflow Temperature (s): 30

The short time required at peak reflow temperature during assembly minimizes the risk of thermal damage to the diode, ensuring its reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this diode can withstand the heat generated during soldering processes without compromising its performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC and vice versa, making it an essential component for power supply circuits.

Maximum Forward Voltage (VF): 0.65 V

The low maximum forward voltage drop across the diode ensures minimal power loss and efficient conversion of electrical energy, contributing to overall system efficiency.

Maximum Output Current: 2 A

Capable of handling a maximum output current of 2 A, this diode is suitable for various low to medium power applications, ensuring reliable performance under load.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speed, low forward voltage drop, and high efficiency, making it an excellent choice for high-frequency applications.

Terminal Form: FLAT

The flat terminal form provides stability during soldering and ensures a secure connection, offering reliable electrical contact and mechanical support for the diode.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a maximum repetitive peak reverse voltage of 60 V, this diode is suitable for applications that require voltage rectification and protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 25 A

Capable of handling a maximum non-repetitive peak forward current of 25 A, this diode offers robust performance and protection against transient overcurrent events.

Diode Element Material: SILICON

Constructed with silicon, the diode element material provides stable and consistent performance over a wide temperature range, ensuring reliability in various operating conditions.

Technical Specifications

Diodes & Rectifiers NTS260ESFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

12 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS260ESFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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