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NTS260SFT1G

Onsemi

NTS260SFT1G by Onsemi

NTS260SFT1G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.65V. It operates b/w -65 to 150°C, has a reverse test voltage of 60V, and is ideal for efficiency applications.

Median Price

$0.080

Lifecycle Status

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12

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 1,268,384 parts In-Stock

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Ozdisan Elektronik

Türkiye . 4,475 parts In-Stock

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$0.057

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Nova Conductors

Japan . 77 parts In-Stock

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NAC Semi

USA . 4,695 parts In-Stock

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Martec Srl

Italy . 1,068 parts In-Stock

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ComSIT Distribution GmbH

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Digiode

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Corohmni

South Africa . 147 parts In-Stock

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Ampacity Inc.

Singapore . 1,275,731 parts In-Stock

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Semicontronic

India . 853,440 parts In-Stock

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Decca Corp

Germany . 853,319 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,992 parts In-Stock

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$0.090

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Modulus Dynamics

Lithuania . 24,104 parts In-Stock

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Advanced Electronics

New Zealand . 150 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

USA . 580 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Kepictronics

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Overview

Discover the NTS260SFT1G by Onsemi - a top-quality Schottky rectifier diode that offers unparalleled efficiency and reliability in a small outline package. Perfect for a variety of applications, this diode provides a maximum forward voltage of just 0.65V and can handle up to 2A of output current. With a maximum reverse voltage of 60V and a surface-mount design, this diode is ideal for high-performance electronics where space is limited. Trust in Onsemi's reputation for excellence and choose the NTS260SFT1G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good protection and durability for the diode, making it suitable for various applications.

Maximum Reverse Current: 50 uA

Low reverse current ensures efficient operation and minimal power loss in the circuit.

Reverse Test Voltage: 60 V

Suitable for applications requiring a reverse test voltage of up to 60 volts.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in different environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC current, making it ideal for power supply applications.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speed, enhancing the overall performance of the diode.

Technical Specifications

Diodes & Rectifiers NTS260SFT1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

NONE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

50 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NTS260SFT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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