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NTLUD3C20CZTBG

Onsemi

NTLUD3C20CZTBG by Onsemi

NTLUD3C20CZTBG by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications. With a max pulsed drain current of 21A, it operates in enhancement mode at temperatures ranging from -55 to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,459 parts In-Stock

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Vyrian

USA . 2,405 parts In-Stock

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TANS Electronics

Latvia . 7,682 parts In-Stock

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Problanco Electronics

Mexico . 5,222 parts In-Stock

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SupplyDigital Components

Austria . 2,687 parts In-Stock

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Corphita

USA . 2,288 parts In-Stock

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Kulean Microsystems

USA . 1,287 parts In-Stock

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UHIMA Technologies

Türkiye . 919 parts In-Stock

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Corohmni

South Africa . 111 parts In-Stock

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Overview

Unlock the power of high-quality performance with the NTLUD3C20CZTBG by Onsemi. Manufactured with precision and expertise, this Power FET is designed to provide seamless switching applications with maximum efficiency. Ideal for a wide range of uses, this transistor offers customers unrivaled value and benefits, ensuring reliable operation and optimal performance. Upgrade your projects with the NTLUD3C20CZTBG and experience the advantage of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options allows for versatility in different circuit designs and applications.

Minimum DS Breakdown Voltage: 12 V

The high breakdown voltage rating allows for the transistor to be used in a variety of higher voltage applications.

Surface Mount: YES

Being surface mountable makes the product easy to install and saves space on the circuit board.

Maximum Pulsed Drain Current (IDM): 21 A

The high pulsed drain current rating allows the transistor to handle sudden spikes in current without failure.

Maximum Power Dissipation (Abs): 1.4 W

With a high power dissipation rating, the transistor can handle higher loads without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for the transistor to be used in various environmental conditions.

Technical Specifications

Power Field Effect Transistors (FET) NTLUD3C20CZTBG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

6.4 A

Maximum Drain Current (ID):

6.4 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

21 A

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTLUD3C20CZTBG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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