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NP2100SAMCT3G

Onsemi

NP2100SAMCT3G by Onsemi

NP2100SAMCT3G by Onsemi is a single silicon surge protector with 20A non-repetitive peak on-state current. It has a max DC off-state voltage of 180V and operates b/w -55 to 150 °C. Ideal for applications requiring protection against surges in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,663 parts In-Stock

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Digiode

USA . 998 parts In-Stock

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998

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,915 parts In-Stock

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7,915

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TANS Electronics

Latvia . 7,236 parts In-Stock

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7,236

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SupplyDigital Components

Austria . 4,877 parts In-Stock

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Corphita

USA . 1,645 parts In-Stock

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Problanco Electronics

Mexico . 1,155 parts In-Stock

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1,155

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UHIMA Technologies

Türkiye . 667 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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Overview

Protect your electronic devices with the NP2100SAMCT3G from Onsemi, a top-of-the-line Silicon Surge Protector. Onsemi is known for its high-quality products and this surge protector is no exception, offering unmatched reliability and performance. Ideal for a wide range of applications, this compact and efficient device provides peace of mind by safeguarding your valuable equipment from power surges. Say goodbye to worries about damage caused by electrical spikes and enjoy uninterrupted operation with the NP2100SAMCT3G. Trust Onsemi for superior protection and quality you can count on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection against external environmental factors, making this surge protector reliable for long-term use.

Non Repetitive Peak On-state Current: 20 A

With a high non-repetitive peak on-state current of 20A, this surge protector can effectively handle surge currents, ensuring the protection of connected devices.

Surface Mount: YES

Being surface mountable, this surge protector can be easily integrated into circuit boards, saving space and simplifying the installation process.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this surge protector can withstand elevated temperatures, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures that this surge protector remains operational even in extreme cold conditions, providing reliable protection year-round.

Maximum Breakdown Voltage: 240 V

The high maximum breakdown voltage of 240V ensures that this surge protector can effectively clamp transient voltages, safeguarding connected equipment from voltage spikes.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

Utilizing thyristor technology, this surge protector offers fast response times to surges, ensuring rapid protection for sensitive electronics.

Technical Specifications

Silicon Surge Protectors NP2100SAMCT3G attributes and parameters. Explore more Silicon Surge Protectors devices from Onsemi

Specs

Maximum Breakdown Voltage:

240 V

Configuration:

Maximum DC Off-state Voltage:

180 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

20 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

NP2100SAMCT3G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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