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NLVVHC1GT04DFT2G

Onsemi

NLVVHC1GT04DFT2G by Onsemi

NLVVHC1GT04DFT2G by Onsemi is a CMOS Logic Gate with 5 terminals, operating at -55 to 125 °C. It has a Propagation Delay of 17.5 ns and Max I (ol) of 8 Amp, suitable for military-grade applications requiring fast signal processing in compact spaces.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Verical

USA . 27,000 parts In-Stock

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$0.047

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$0.037

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.049

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R&J Components

USA . 119,743 parts In-Stock

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Bristol Electronics

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Prism Electronics

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Vyrian

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Digiode

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Corohmni

South Africa . 382 parts In-Stock

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AZTECH Wire

Italy . 577 parts In-Stock

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$15.170

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Perfect Parts

USA . 89,385 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,326 parts In-Stock

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Problanco Electronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 959 parts In-Stock

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Corphita

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Microchip USA

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Overview

Unlock unparalleled performance and reliability with the NLVVHC1GT04DFT2G logic gate from Onsemi. Designed with precision and quality in mind, this product boasts a wide range of applications in various industries. Experience seamless integration, optimized performance, and enhanced efficiency with this cutting-edge technology. Say goodbye to compromises and hello to superior results with the NLVVHC1GT04DFT2G by Onsemi. Elevate your projects to new heights and stay ahead of the competition with this innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material ensures durability and reliability of the logic gate.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Screening Level: AEC-Q100

Meets automotive quality standards for reliable performance in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operates efficiently at a standard voltage of 5V.

Propagation Delay (tpd): 17.5 ns

Fast propagation delay ensures quick response times in logic operations.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various applications.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLVVHC1GT04DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

17.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1GT04DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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