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NLVVHC1G32DFT1G

Onsemi

NLVVHC1G32DFT1G by Onsemi

NLVVHC1G32DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay, and 5V nominal voltage. Ideal for military applications due to AEC-Q100 screening level, -55 to 125 °C operating temperature range, and small outline package style.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,844 parts In-Stock

1+ parts

$0.310

100+ parts

$0.099

1k+ parts

$0.063

10k+ parts

$0.045

1,844

$0.310

$0.099

$0.063

$0.045

Chip1Stop

Japan . 2,094 parts In-Stock

1+ parts

$0.647

100+ parts

$0.150

1k+ parts

$0.093

10k+ parts

-

2,094

$0.647

$0.150

$0.093

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Rochester

USA . 4,081 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

$0.034

10k+ parts

$0.031

4,081

-

$0.041

$0.034

$0.031

Mouser Electronics

USA . 171 parts In-Stock

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$0.041

171

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$0.041

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Digiode

USA . 2,052 parts In-Stock

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$0.032

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$0.032

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Vyrian

USA . 2,193 parts In-Stock

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$0.034

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ComSIT Distribution GmbH

Germany . 130,000 parts In-Stock

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Chip Stock

USA . 19,000 parts In-Stock

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Component Stockers USA

USA . 174,068 parts In-Stock

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$0.030

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$0.030

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$0.030

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$0.030

174,068

$0.030

$0.030

$0.030

$0.030

Corphita

USA . 1,287 parts In-Stock

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$0.031

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Corohmni

South Africa . 465 parts In-Stock

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$0.034

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465

$0.034

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Vigor

Singapore . 460 parts In-Stock

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$0.140

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460

$0.140

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 23,324 parts In-Stock

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SupplyDigital Components

Austria . 6,656 parts In-Stock

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TANS Electronics

Latvia . 6,486 parts In-Stock

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Problanco Electronics

Mexico . 4,646 parts In-Stock

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Kulean Microsystems

USA . 3,822 parts In-Stock

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GreenTree Electronics

Israel . 2,194 parts In-Stock

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Authorized Procurement Solutions

USA . 2,094 parts In-Stock

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Microchip USA

USA . 647 parts In-Stock

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647

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Experience the cutting-edge innovation with the NLVVHC1G32DFT1G by Onsemi, a high-quality logic gate that delivers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is designed for various applications with its fast propagation delay and low power consumption. With its advanced technology and durable construction, customers can expect seamless integration and long-lasting operation. Upgrade your systems today with the NLVVHC1G32DFT1G and enjoy the benefits of superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability in various operating conditions.

Propagation Delay At Nominal Supply: 10 ns

Ensures fast operation and response times.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage requirements in most applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various environments.

Minimum Operating Temperature: -55 °C

Operates reliably even in extreme cold conditions.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLVVHC1G32DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1G32DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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