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NLU2G17CMX1TCG

Onsemi

NLU2G17CMX1TCG by Onsemi

NLU2G17CMX1TCG by Onsemi is a CMOS Logic Gate with 20.5 ns Propagation Delay, suitable for military-grade applications. It operates at a supply voltage range of 1.65V to 5.5V and features Schmitt Trigger technology, making it ideal for high-speed signal processing in harsh environments. This small outline package has a very thin profile and is surface mountable, offering versatility in compact electronic designs.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 13,291 parts In-Stock

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-

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$0.132

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$0.110

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$0.098

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$0.132

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$0.098

Verical

USA . 6,816 parts In-Stock

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$0.122

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$0.122

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Digiode

USA . 2,096 parts In-Stock

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$0.103

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$0.103

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Vyrian

USA . 2,197 parts In-Stock

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Corphita

USA . 114 parts In-Stock

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$0.097

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$0.097

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Vigor

Singapore . 274 parts In-Stock

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$0.100

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Corohmni

South Africa . 242 parts In-Stock

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$0.108

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Component Stockers USA

USA . 11,636 parts In-Stock

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$0.110

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$0.110

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$0.100

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$0.100

11,636

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$0.110

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$0.100

Advanced Electronics

New Zealand . 100 parts In-Stock

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$20.236

100+ parts

$20.034

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$19.224

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$20.236

$20.034

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AZTECH Wire

Italy . 863 parts In-Stock

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$21.070

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Continental Prestige Electronics

USA . 13,291 parts In-Stock

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$0.094

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SupplyDigital Components

Austria . 6,833 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 4,229 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 593 parts In-Stock

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Futuretech Components

Singapore . 542 parts In-Stock

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Microchip USA

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TANS Electronics

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Overview

Experience unparalleled performance and reliability with the Onsemi NLU2G17CMX1TCG logic gates. Manufactured by industry leader Onsemi, these logic gates offer exceptional quality and precision for a variety of applications. With a fast propagation delay and low power consumption, this product provides value and efficiency to customers seeking high-performance solutions. Trust Onsemi for cutting-edge technology that delivers results. Elevate your projects with the NLU2G17CMX1TCG logic gates today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY materials are commonly used in electronic components to provide a good balance of durability and affordability. This package body material ensures the product is cost-effective and reliable.

Propagation Delay At Nominal Supply: 20.5 ns

With a low propagation delay at nominal supply voltage, this logic gate can quickly respond to input signals, making it suitable for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is a standard voltage level in many electronic systems, making this logic gate compatible with a wide range of applications.

Load Capacitance (CL): 50 pF

The 50 pF load capacitance indicates the ability of the logic gate to drive capacitive loads without compromising performance, ensuring reliable operation in various circuit configurations.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this logic gate can withstand elevated temperatures, making it suitable for harsh environments or industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable in signal processing tasks.

Technical Specifications

Logic Gates NLU2G17CMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

2G

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

20.5 ns

Propagation Delay (tpd):

20.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLU2G17CMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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