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NLAS4783MN1R2G

Onsemi

NLAS4783MN1R2G by Onsemi

NLAS4783MN1R2G by Onsemi is a 16-terminal SPDT multiplexer with a max on-state resistance of 1 ohm. Operating b/w -40 to 85°C, it has a nominal voltage range of 1.65-2.7V and supports power supplies of 1.8/3.3V. Ideal for industrial applications requiring fast switching times and high isolation levels up to 62 dB.

Median Price

$0.791

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 197 parts In-Stock

1+ parts

$1.290

100+ parts

$0.754

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-

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197

$1.290

$0.754

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Rochester

USA . 89,798 parts In-Stock

1+ parts

-

100+ parts

$0.762

1k+ parts

$0.633

10k+ parts

$0.564

89,798

-

$0.762

$0.633

$0.564

Verical

USA . 71,560 parts In-Stock

1+ parts

-

100+ parts

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$0.791

10k+ parts

$0.705

71,560

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$0.791

$0.705

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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3,000

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Digiode

USA . 2,011 parts In-Stock

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$0.594

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2,011

$0.594

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Vyrian

USA . 5,855 parts In-Stock

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5,855

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Flip Electronics

USA . 3,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 50 parts In-Stock

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50

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Distributors (Availability)

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Corphita

USA . 1,865 parts In-Stock

1+ parts

$0.562

100+ parts

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1,865

$0.562

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Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.625

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382

$0.625

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Microchip USA

USA . 5,974 parts In-Stock

1+ parts

$4.341

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5,974

$4.341

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Lixinc

USA . 12,753 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,900 parts In-Stock

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4,900

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TANS Electronics

Latvia . 3,984 parts In-Stock

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3,984

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Problanco Electronics

Mexico . 3,438 parts In-Stock

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Perfect Parts

USA . 1,522 parts In-Stock

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UHIMA Technologies

Türkiye . 751 parts In-Stock

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751

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Kulean Microsystems

USA . 529 parts In-Stock

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529

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Overview

Enhance the performance of your electronic devices with the NLAS4783MN1R2G by Onsemi. With a reputation for high-quality products, Onsemi delivers reliable multiplexers & switches that cater to various applications. This versatile product offers customers value and benefits such as seamless switching capabilities, low on-state resistance, and excellent off-state isolation. Trust Onsemi to provide innovative solutions that elevate your designs to the next level. Experience the difference with Onsemi's NLAS4783MN1R2G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the product suitable for various applications.

No. of Functions: 3

Having multiple functions increases the versatility of the product, allowing it to perform different tasks efficiently.

Nominal Supply Voltage (Vsup): 2.7 V

Operating at a nominal voltage of 2.7V ensures efficient power consumption and performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the product can withstand harsh environments and prolonged use.

Minimum Supply Voltage (Vsup): 1.65 V

The minimum supply voltage of 1.65V ensures that the product can still function under low power conditions.

Maximum On-state Resistance (Ron): 1 ohm

A low on-state resistance of 1 ohm ensures minimal power loss and efficient performance.

Switching (V): BREAK-BEFORE-MAKE

The BREAK-BEFORE-MAKE switching feature prevents short circuits and ensures smooth transition between different functions.

Technical Specifications

Multiplexers & Switches NLAS4783MN1R2G attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NC

No. of Channels:

1

No. of Functions:

3

No. of Terminals:

16

Nominal Off-state Isolation:

62 dB

Maximum On-state Resistance (Ron):

1 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

4.7 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Maximum Switch-off Time:

20 ns

Maximum Switch-on Time:

27 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

3 mm

Trade Compliance

NLAS4783MN1R2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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