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NLAS325US

Onsemi

NLAS325US by Onsemi

NLAS325US by Onsemi is a CMOS SPST switch with 2 functions, operating at -55 to 125 °C. It has a max on-state resistance of 55 ohm, suitable for military-grade applications requiring separate outputs and high isolation levels up to 93 dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,487 parts In-Stock

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Digiode

USA . 2,125 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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AZTECH Wire

Italy . 1,040 parts In-Stock

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$11.460

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QUARKTWIN TECHNOLOGY LTD

USA . 27,355 parts In-Stock

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TANS Electronics

Latvia . 8,168 parts In-Stock

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Problanco Electronics

Mexico . 7,692 parts In-Stock

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Kulean Microsystems

USA . 2,981 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,813 parts In-Stock

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SupplyDigital Components

Austria . 1,006 parts In-Stock

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UHIMA Technologies

Türkiye . 529 parts In-Stock

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Corohmni

South Africa . 368 parts In-Stock

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Vigor

Singapore . 331 parts In-Stock

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Microchip USA

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Overview

Unleash the power of innovation with the NLAS325US by Onsemi. This cutting-edge multiplexer & switch offers unparalleled quality and reliability, backed by the reputable manufacturer Onsemi. Ideal for a wide range of applications, this versatile product boasts a small outline, very thin profile, and shrink pitch package style for seamless integration. With separate outputs, a military-grade temperature rating, and break-before-make switching, the NLAS325US delivers unmatched performance and value to customers looking to elevate their projects to the next level. Experience the difference with Onsemi's NLAS325US – where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Surface Mount: YES

Being surface mountable makes installation and soldering of the multiplexer easier and more efficient, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3 V

Operating at a nominal supply voltage of 3V makes this product energy-efficient and suitable for low power consumption devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this multiplexer can withstand harsh environmental conditions and operate reliably in extreme temperatures.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption, high speed performance, and compatibility with a wide range of devices, making it a versatile choice for many applications.

Technical Specifications

Multiplexers & Switches NLAS325US attributes and parameters. Explore more Multiplexers & Switches devices from Onsemi

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

2.3 mm

Normal Position (V):

NO/NC

No. of Channels:

1

No. of Functions:

2

No. of Terminals:

8

Nominal Off-state Isolation:

93 dB

Maximum On-state Resistance (Ron):

55 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

2.5/5

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Multiplexer or Switches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Maximum Switch-off Time:

16 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

2 mm

Trade Compliance

NLAS325US Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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