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NL37WZ14US

Onsemi

NL37WZ14US by Onsemi

NL37WZ14US by Onsemi is a CMOS Logic Gate with 3 functions, 6.6 ns propagation delay at 2.5V, and 50 pF load capacitance. Ideal for military-grade applications due to its Schmitt Trigger feature and wide operating temperature range (-55 to 125 °C). Package style: Small Outline, Very Thin Profile, Shrink Pitch.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 273,130 parts In-Stock

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$0.159

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$0.132

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$0.117

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$0.117

DigiKey

USA . 273,130 parts In-Stock

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$0.200

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$0.200

Verical

USA . 150,676 parts In-Stock

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$0.147

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$0.147

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Digiode

USA . 693 parts In-Stock

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$0.124

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Chip Stock

USA . 57,000 parts In-Stock

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Vyrian

USA . 4,616 parts In-Stock

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Prism Electronics

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Corphita

USA . 1,106 parts In-Stock

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$0.117

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Vigor

Singapore . 646 parts In-Stock

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$0.120

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Corohmni

South Africa . 119 parts In-Stock

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$0.130

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AZTECH Wire

Italy . 481 parts In-Stock

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$8.970

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Continental Prestige Electronics

USA . 273,130 parts In-Stock

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$0.113

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Kulean Microsystems

USA . 8,311 parts In-Stock

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TANS Electronics

Latvia . 5,618 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 5,131 parts In-Stock

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SupplyDigital Components

Austria . 4,821 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 1,945 parts In-Stock

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Microchip USA

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UHIMA Technologies

Türkiye . 268 parts In-Stock

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Overview

Enhance your electronic projects with the NL37WZ14US logic gate by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that guarantee reliability and performance. Ideal for various applications, this logic gate offers fast propagation delay, low power consumption, and wide operating temperature range. With its compact design and advanced technology, this product provides exceptional value and efficiency for all your circuit needs. Experience seamless integration and smooth operation with the NL37WZ14US from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the logic gates, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 6.6 ns

The low propagation delay ensures fast signal processing, making these logic gates suitable for applications where speed is crucial.

Surface Mount: YES

Surface mount capability allows for easy integration on PCBs, saving space and simplifying the assembly process.

No. of Functions: 3

Having multiple functions in a single package saves board space and reduces the need for additional components, simplifying circuit design.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal supply voltage of 2.5V makes these logic gates compatible with a wide range of electronic devices and systems.

Load Capacitance (CL): 50 pF

The low load capacitance ensures efficient signal transmission and reduces the risk of signal distortion or loss.

Power Supplies (V): 3.3

Operating at a power supply voltage of 3.3V makes these logic gates ideal for applications where a higher voltage is required for optimal performance.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the logic gates to other components, allowing for versatile circuit configurations.

Maximum I (ol): 24 Amp

The high maximum output current allows these logic gates to drive multiple loads or components, enhancing their capability in complex circuitry.

Minimum Operating Temperature: -55 °C

The wide operating temperature range ensures reliable performance in extreme environments, making these logic gates suitable for a variety of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NL37WZ14US attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6.6 ns

Propagation Delay (tpd):

8.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Trade Compliance

NL37WZ14US Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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