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NIF5002NT1

Onsemi

NIF5002NT1 by Onsemi

NIF5002NT1 by Onsemi is a Peripheral Driver with built-in TRANSIENT, OVER VOLTAGE, and THERMAL protections. It operates at 12V nominal voltage with 5.7A output peak current limit. Ideal for BUFFER OR INVERTER BASED applications due to its compact size of 6.5mm x 3.5mm x 1.75mm and quick turn-on/off times of 30us/100us.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,523 parts In-Stock

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Digiode

USA . 2,230 parts In-Stock

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2,230

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Distributors (Availability)

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AZTECH Wire

Italy . 263 parts In-Stock

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$22.100

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263

$22.100

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Component Stockers USA

USA . 654 parts In-Stock

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$99.990

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654

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 7,915 parts In-Stock

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Problanco Electronics

Mexico . 7,003 parts In-Stock

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Corphita

USA . 2,013 parts In-Stock

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SupplyDigital Components

Austria . 1,579 parts In-Stock

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Kulean Microsystems

USA . 1,576 parts In-Stock

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UHIMA Technologies

Türkiye . 951 parts In-Stock

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951

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Microchip USA

USA . 468 parts In-Stock

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468

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Corohmni

South Africa . 144 parts In-Stock

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Vigor

Singapore . 129 parts In-Stock

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Overview

Enhance your electronic devices with the NIF5002NT1 by Onsemi, a top-tier manufacturer known for their quality and innovation. As a leading product in the Peripheral Drivers category, this device offers built-in protections against transient events, over-voltage situations, and thermal issues, ensuring the safety and reliability of your system. With a compact design and superior performance, this product delivers exceptional value to customers seeking efficient and dependable solutions for their applications. Upgrade your technology with the NIF5002NT1 and experience the benefits of cutting-edge design and functionality.

Feature Benefit Bullets

Built-in Protections: TRANSIENT; OVER VOLTAGE; THERMAL

Provides protection against transient spikes, over voltage situations, and thermal issues, ensuring the longevity and reliability of the product.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and helps in ensuring stable connections during operation.

Maximum Seated Height: 1.75 mm

Low profile design allows for compact integration into various systems or applications.

Width: 3.5 mm

Narrow width enables efficient use of space and allows for tight placement in crowded PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient reflow time ensures proper soldering and reliability of the product during manufacturing.

Peak Reflow Temperature °C: 235

Ability to withstand high reflow temperatures provides robustness during assembly processes.

Length: 6.5 mm

Moderate length offers a balanced form factor, suitable for various application requirements.

Nominal Supply Voltage: 12 V

Compatible with common supply voltages, making it versatile for a wide range of applications.

Turn-on Time: 30 us

Fast turn-on time ensures quick response and performance in dynamic operational conditions.

Terminal Pitch: 2.3 mm

Optimal terminal pitch simplifies PCB layout, aiding in easier design and assembly processes.

Moisture Sensitivity Level (MSL): 3

MSL rating of 3 indicates moderate moisture sensitivity, suitable for standard manufacturing environments.

Nominal Output Peak Current Limit: 5.7 A

High output peak current limit enables driving of more demanding loads, enhancing the product's performance capabilities.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Versatile interface IC type ensures compatibility with various systems and devices, increasing the product's usability.

Turn-off Time: 100 us

Moderate turn-off time helps in maintaining stable operations and preventing unwanted fluctuations in output signals.

Output Current Flow Direction: SINK

Sink output current flow direction allows for efficient control and regulation of connected devices, enhancing overall system performance.

Technical Specifications

Peripheral Drivers NIF5002NT1 attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER VOLTAGE; THERMAL

JESD-609 Code:

e0

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

5.7 A

Package Code:

SOP

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Nominal Supply Voltage:

12 V

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Pitch:

2.3 mm

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

100 us

Turn-on Time:

30 us

Width:

3.5 mm

Trade Compliance

NIF5002NT1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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