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NIF5002NT3

Onsemi

NIF5002NT3 by Onsemi

NIF5002NT3 by Onsemi is a Peripheral Driver with built-in protections for transient, over current, and over voltage. It has a max seated height of 1.75mm and nominal output peak current limit of 5.7A. Ideal for applications requiring buffer or inverter based peripheral drivers with sink output current flow direction.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,355 parts In-Stock

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Digiode

USA . 2,313 parts In-Stock

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AZTECH Wire

Italy . 665 parts In-Stock

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$10.270

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665

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QUARKTWIN TECHNOLOGY LTD

USA . 16,414 parts In-Stock

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Kulean Microsystems

USA . 7,271 parts In-Stock

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Microchip USA

USA . 6,136 parts In-Stock

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SupplyDigital Components

Austria . 5,482 parts In-Stock

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TANS Electronics

Latvia . 3,145 parts In-Stock

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Problanco Electronics

Mexico . 1,462 parts In-Stock

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UHIMA Technologies

Türkiye . 808 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Vigor

Singapore . 213 parts In-Stock

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Corphita

USA . 141 parts In-Stock

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Overview

Enhance your electronic designs with the NIF5002NT3 by Onsemi, a top-tier manufacturer known for producing high-quality peripheral drivers. This versatile component offers built-in protections against transient events, over current, over voltage, and thermal issues, ensuring reliable performance in various applications. With a compact design and quick response times, this product provides exceptional value by delivering efficient output peak current limits up to 5.7 A. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

Provides safeguarding against various electrical issues, ensuring the reliability and durability of the peripheral driver.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability, making it easy to install and integrate into electronic circuits.

Maximum Seated Height: 1.75 mm

Compact design allows for easy integration into space-constrained electronic devices.

Width: 3.5 mm

Slim profile enables versatile mounting options and facilitates efficient PCB layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder reflow during installation, reducing the risk of damage to the peripheral driver.

Peak Reflow Temperature °C: 235

Withstands high reflow temperatures, ensuring reliability in manufacturing processes.

Length: 6.5 mm

Optimal size for accommodating necessary components and connections, without taking up excessive space.

Turn-on Time: 30 us

Swift response time allows for quick activation, enhancing the performance of the peripheral driver.

Terminal Pitch: 2.3 mm

Suitable for easy connection to external devices or circuits, facilitating seamless integration.

Moisture Sensitivity Level (MSL): 3

Indicates moderate sensitivity to moisture, which is important for reliability in various environmental conditions.

Nominal Output Peak Current Limit: 5.7 A

High peak current limit supports a wide range of applications, making it versatile and reliable.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

Offers flexibility in interfacing with different types of circuits, enhancing compatibility and usability.

Turn-off Time: 100 us

Quick turn-off time enables efficient power management and control, improving overall performance.

Output Current Flow Direction: SINK

Sinking current capability allows for effective control and regulation of connected devices, enhancing functionality.

Technical Specifications

Peripheral Drivers NIF5002NT3 attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

JESD-609 Code:

e0

Length:

6.5 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

5.7 A

Package Code:

SOP

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Terminal Finish:

TIN LEAD

Terminal Pitch:

2.3 mm

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

100 us

Turn-on Time:

30 us

Width:

3.5 mm

Trade Compliance

NIF5002NT3 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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