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NIF5002NT3G

Onsemi

NIF5002NT3G by Onsemi

NIF5002NT3G by Onsemi is a Peripheral Driver with built-in protections for transient, over current, and over voltage. It has a turn-on time of 30 us and nominal output peak current limit of 5.7 A. Widely used as a buffer or inverter based peripheral driver in various applications due to its compact size and efficient performance.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 4,483 parts In-Stock

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J2 Sourcing AB

Sweden . 3,258 parts In-Stock

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Chip Stock

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Digiode

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NexGen Digital

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AZTECH Wire

Italy . 659 parts In-Stock

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Component Stockers USA

USA . 469 parts In-Stock

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$99.990

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Kepictronics

USA . 56,000 parts In-Stock

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Microchip USA

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Kulean Microsystems

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Corphita

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Corohmni

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UHIMA Technologies

Türkiye . 322 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NIF5002NT3G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. The NIF5002NT3G falls under the category of Peripheral Drivers, offering built-in protections against transient, over current, over voltage, and thermal issues. With a compact size and quick response time, this product provides seamless integration and efficient operation. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations. Elevate your electronics with the NIF5002NT3G today.

Feature Benefit Bullets

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

The built-in protections ensure the safety and reliability of the peripheral driver, protecting it from various risks such as transient voltage, over current, over voltage, and thermal issues.

Terminal Finish: TIN

The TIN terminal finish provides good conductivity and corrosion resistance, ensuring a reliable connection for the peripheral driver.

Maximum Seated Height: 1.75 mm

The low maximum seated height allows for compact and space-saving designs when integrating this peripheral driver into a system.

Width: 3.5 mm

The narrow width of 3.5 mm enables flexibility in placement and installation of the peripheral driver in various applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this peripheral driver can withstand high-temperature manufacturing processes, ensuring robust assembly.

Length: 6.5 mm

The moderate length of 6.5 mm strikes a balance between compactness and functionality, making it suitable for a range of applications.

Turn-on Time: 30 us

The fast turn-on time of 30 microseconds ensures quick response and efficient operation of the peripheral driver.

Terminal Pitch: 2.3 mm

The terminal pitch of 2.3 mm facilitates easy connection and integration of the peripheral driver with other components in a circuit.

Nominal Output Peak Current Limit: 5.7 A

The high nominal output peak current limit of 5.7 amps allows the peripheral driver to handle demanding loads and provide reliable performance.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

The interface IC type offers flexibility in driving peripheral devices, allowing compatibility with various systems and components.

Turn-off Time: 100 us

The short turn-off time of 100 microseconds ensures rapid switching and precise control of the peripheral driver.

Output Current Flow Direction: SINK

The sink output current flow direction is suitable for driving loads that require a sinking current, enhancing the compatibility of the peripheral driver with different devices.

Technical Specifications

Peripheral Drivers NIF5002NT3G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

JESD-609 Code:

e3

Length:

6.5 mm

No. of Functions:

1

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

5.7 A

Package Code:

SOP

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Terminal Finish:

TIN

Terminal Pitch:

2.3 mm

Turn-off Time:

100 us

Turn-on Time:

30 us

Width:

3.5 mm

Trade Compliance

NIF5002NT3G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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