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NIF5002NT1G

Onsemi

NIF5002NT1G by Onsemi

NIF5002NT1G by Onsemi is a Peripheral Driver with built-in protections for transient, over current, over voltage, and thermal issues. It has a turn-on time of 30 us and nominal output peak current limit of 5.7 A. This IC type BUFFER OR INVERTER BASED PERIPHERAL DRIVER is ideal for applications requiring sink output current flow direction.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 6,606 parts In-Stock

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Chip Stock

USA . 2,727 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 860 parts In-Stock

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ComSIT Distribution GmbH

Germany . 707 parts In-Stock

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Digiode

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NexGen Digital

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AZTECH Wire

Italy . 1,020 parts In-Stock

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$19.930

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Kepictronics

USA . 27,860 parts In-Stock

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Problanco Electronics

Mexico . 8,107 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,782 parts In-Stock

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Perfect Parts

USA . 6,382 parts In-Stock

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SupplyDigital Components

Austria . 5,654 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,062 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 1,821 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Futuretech Components

Singapore . 656 parts In-Stock

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Vigor

Singapore . 250 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 207 parts In-Stock

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Overview

Unleash the power of innovation with the NIF5002NT1G by Onsemi, a top-tier manufacturer known for delivering high-quality peripheral drivers. With built-in protections against transient, over current, over voltage, and thermal issues, this compact device offers unparalleled reliability and peace of mind. Perfect for applications requiring precise control and efficient performance, the NIF5002NT1G ensures seamless operation and maximum output peak current limit of 5.7A. Trust Onsemi to provide cutting-edge solutions that elevate your projects to new heights. Experience the difference today!

Feature Benefit Bullets

Built-in Protections: TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

This product offers built-in protections against various types of electrical faults, ensuring the safety and longevity of connected devices.

Terminal Finish: Tin (Sn)

The use of Tin terminal finish provides excellent conductivity and corrosion resistance, resulting in reliable connections.

Maximum Seated Height: 1.75 mm

Low profile design allows for compact and space-saving installations in various electronic applications.

Width: 3.5 mm

Narrow width makes this peripheral driver suitable for use in tight spaces or crowded circuit boards.

Maximum Time At Peak Reflow Temperature (s): 40

The short reflow time required for this product simplifies the manufacturing process and reduces assembly costs.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder joints and ensures the durability of the peripheral driver.

Length: 6.5 mm

The moderate length of this product provides a good balance between compactness and ease of installation.

Turn-on Time: 30 us

Fast turn-on time ensures quick response and efficient performance in controlling peripheral devices.

Terminal Pitch: 2.3 mm

Optimal terminal pitch facilitates easy and secure connections, reducing the risk of short circuits or loose connections.

Nominal Output Peak Current Limit: 5.7 A

High output peak current limit allows for the driving of demanding loads, making this peripheral driver versatile and capable.

Interface IC Type: BUFFER OR INVERTER BASED PERIPHERAL DRIVER

The flexible interface IC type enables compatibility with different types of peripheral devices, enhancing the product's versatility.

Turn-off Time: 100 us

Relatively fast turn-off time ensures efficient operation and control of peripheral devices, enhancing overall system performance.

Output Current Flow Direction: SINK

Sink output current flow direction allows for seamless integration with compatible devices, ensuring smooth and reliable operation.

Technical Specifications

Peripheral Drivers NIF5002NT1G attributes and parameters. Explore more Peripheral Drivers devices from Onsemi

Specs

Built-in Protections:

TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL

JESD-609 Code:

e3

Length:

6.5 mm

No. of Functions:

1

Output Current Flow Direction:

SINK

Nominal Output Peak Current Limit:

5.7 A

Package Code:

SOP

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Terminal Finish:

Tin (Sn)

Terminal Pitch:

2.3 mm

Maximum Time At Peak Reflow Temperature (s):

40

Turn-off Time:

100 us

Turn-on Time:

30 us

Width:

3.5 mm

Trade Compliance

NIF5002NT1G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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