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NDS9435A

Onsemi

NDS9435A by Onsemi

NDS9435A by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max drain current of 5.3A, 0.05 ohm RDS(on), and operates in enhancement mode. This small outline transistor has a max power dissipation of 2.5W and can withstand temperatures up to 175°C.

Median Price

$0.462

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5 parts In-Stock

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-

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$0.462

1k+ parts

$0.384

10k+ parts

$0.342

5

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$0.462

$0.384

$0.342

Distributors (In-Stock)

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Digiode

USA . 1,420 parts In-Stock

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$0.360

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Vyrian

USA . 1,986 parts In-Stock

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$0.379

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$0.379

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Component Electronics Inc.

Canada . 7 parts In-Stock

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$3.850

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$2.880

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$2.500

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7

$3.850

$2.880

$2.500

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R&J Components

USA . 12,500 parts In-Stock

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Bristol Electronics

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MRC Electronics

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Chip Stock

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Sunrise Surplus Inc.

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Anansix

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ACDS - Activité Composants Distribution Service

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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SPM Sales

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EMSNET

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ComSIT Distribution GmbH

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Q Components

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Semi Source

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Goldney Electronics S.L.

Spain . 1,690 parts In-Stock

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Inventory MP

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Inland Empire Components Inc.

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NexGen Digital

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PC Components Company LLC

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Sea View Technologies

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Velocity Electronics

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Lakeview Electronics

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DF Sales Co.

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DF Sales Co.

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300

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Prism Electronics

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Nova Conductors

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Cyclops Electronics Ltd

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Atlantic Semiconductor

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Distributors (Availability)

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Ampacity Inc.

Singapore . 745 parts In-Stock

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$0.322

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745

$0.322

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Corphita

USA . 2,899 parts In-Stock

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$0.341

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Corohmni

South Africa . 202 parts In-Stock

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$0.379

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Component Stockers USA

USA . 692 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,820 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Kulean Microsystems

USA . 7,306 parts In-Stock

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Argo Parts USA

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TANS Electronics

Latvia . 5,663 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 3,816 parts In-Stock

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Problanco Electronics

Mexico . 3,760 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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GreenTree Electronics

Israel . 2,111 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Assy Fe

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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Continental Prestige Electronics

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Futuretech Components

Singapore . 670 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 326 parts In-Stock

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Glotronic Ltd.

UK . 195 parts In-Stock

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Overview

Discover the power of the NDS9435A by Onsemi, a top-of-the-line Small Signal Field Effect Transistor that delivers unparalleled performance and reliability. With a focus on quality, Onsemi is known for producing high-grade electronic components that exceed industry standards. This P-Channel transistor with built-in diode is perfect for switching applications, offering customers a seamless experience with its easy-to-use design. Whether you're a hobbyist or a professional, the NDS9435A provides value, benefits, and advantages that will elevate your projects to the next level. Choose Onsemi for superior technology that never compromises on excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow and control, making it suitable for applications requiring P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the transistor, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient performance in electronic circuits.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving assembly time and space.

Minimum DS Breakdown Voltage: 30 V

Provides a safe operating range for voltage tolerance, protecting the transistor from potential damage.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on circuit boards, optimizing layout design and space utilization.

Terminal Form: GULL WING

Enhances solder joint strength and reliability, ensuring secure connections in the circuit.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the transistor's conductivity, enabling efficient operation in various circuit configurations.

Maximum Drain Current (Abs) (ID): 5.3 A

Supports high current applications with a maximum drain current of 5.3A, ensuring robust performance under heavy loads.

No. of Terminals: 8

Provides multiple connection points for versatile circuit integration and configuration options.

Maximum Power Dissipation (Abs): 2.5 W

Handles power dissipation efficiently, preventing overheating and ensuring stable performance in demanding environments.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space on circuit boards, ideal for applications with size constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for high-speed switching and low power consumption, making it ideal for energy-efficient designs.

Maximum Operating Temperature: 175 °C

Operates reliably at high temperatures up to 175°C, suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Features silicon as the semiconductor material, providing high efficiency and reliability in electronic circuits.

Terminal Finish: MATTE TIN

Ensures good solderability and corrosion resistance, maintaining stable electrical connections over time.

Maximum Drain-Source On Resistance: 0.05 ohm

Offers low on-resistance for efficient power handling and minimal voltage drop across the transistor.

Terminal Position: DUAL

Dual terminals provide flexibility in circuit design and connections, enhancing compatibility with various configurations.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during soldering processes, ensuring reliable and consistent performance after assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS9435A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5.3 A

Maximum Drain Current (ID):

5.3 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS9435A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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