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NDS9407D84Z

Fairchild Semiconductor

NDS9407D84Z by Fairchild Semiconductor

NDS9407D84Z by Fairchild Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 3A ID and 0.15 ohm RDS(on), this MOSFET has GULL WING terminals and can withstand up to 150°C operating temperature.

Median Price

$1.553

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Overview

Unlock the power of cutting-edge technology with Fairchild Semiconductor's NDS9407D84Z Small Signal Field Effect Transistor. Designed for high-performance applications, this P-CHANNEL transistor offers unmatched reliability and efficiency. Whether you need it for switching purposes or enhancing your electronic projects, this transistor delivers exceptional results every time. With a built-in diode and a maximum drain current of 3A, the NDS9407D84Z is the perfect choice for your next project. Trust Fairchild Semiconductor for quality that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and allows for compact design.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel FETs are preferred, such as low-side switching circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode into the transistor package.

Transistor Application: SWITCHING

Designed for high-speed switching applications, providing efficient performance.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, suitable for automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

Can handle higher voltages, offering reliability in various applications.

Operating Mode: ENHANCEMENT MODE

Provides better control over the transistor's operation, making it versatile in different circuits.

Maximum Drain Current (ID): 3 A

Can handle higher currents, suitable for applications requiring significant power.

Maximum Drain-Source On Resistance: 0.15 ohm

Low on-resistance leads to reduced power dissipation and improved efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS9407D84Z attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS9407D84Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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