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NDS9430A

Fairchild Semiconductor

NDS9430A by Fairchild Semiconductor

NDS9430A by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 5.3A Drain Current, and 0.05 ohm On Resistance. With an operating temperature of up to 150°C, this MOSFET comes in a PLASTIC/EPOXY package with GULL WING terminals.

Median Price

$0.740

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Rochester

USA . 10,173 parts In-Stock

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$0.727

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Verical

USA . 7,838 parts In-Stock

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$0.672

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Global Solutions Electronics Company

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Digiode

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Vyrian

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4 Star Electronics, Inc.

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Bristol Electronics

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Semtec, LLC

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Corphita

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Component Stockers USA

USA . 10,972 parts In-Stock

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$0.570

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$0.510

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Metaverse IC Inc.

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Supply Digital

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Overview

Elevate your electronic projects with the NDS9430A by Fairchild Semiconductor. Crafted with precision and expertise, this P-Channel Small Signal Field Effect Transistor offers unrivaled quality and reliability. Whether you're switching circuits or enhancing performance, this transistor delivers superior results every time. With a maximum drain current of 5.3 A and a minimal drain-source on resistance of 0.05 ohm, this product ensures optimal efficiency in a compact package. Trust Fairchild Semiconductor to provide innovative solutions that exceed expectations. Elevate your designs with the NDS9430A today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to environmental factors, making the transistor reliable for long-term use.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring p-channel transistors, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, reducing component count and board space.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring fast operation and low power dissipation.

Surface Mount: YES

Ease of installation on PCBs, saving assembly time and providing a compact footprint.

Minimum DS Breakdown Voltage: 20 V

Suitable for low voltage applications where a breakdown voltage of 20V is sufficient.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into circuit layouts.

Terminal Form: GULL WING

Facilitates easy soldering and reliable connection on PCBs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer low conduction resistance and high input impedance, ideal for switching applications.

Maximum Drain Current (Abs) (ID): 5.3 A

Capable of handling high current loads, suitable for power applications.

No. of Terminals: 8

Provides additional flexibility in circuit connections and functionality.

Maximum Power Dissipation (Abs): 1 W

Capable of dissipating up to 1W of power, ensuring efficiency and reliability in operation.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications, offering high performance in a small form factor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and efficient technology for FETs, ensuring stable operation and performance.

Maximum Operating Temperature: 150 °C

Suitable for high-temperature environments, offering reliable operation in various conditions.

Transistor Element Material: SILICON

Silicon provides high performance and reliability, ideal for demanding applications.

Terminal Finish: MATTE TIN

Matte tin finish for reliable solder joints and optimal electrical conductivity.

Maximum Drain-Source On Resistance: 0.05 ohm

Low on-resistance for efficient switching and minimal power loss.

Terminal Position: DUAL

Dual terminal position for versatile connections and compatibility with different circuit configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) NDS9430A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

5.3 A

Maximum Drain Current (ID):

5.3 A

Maximum Drain-Source On Resistance:

.05 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NDS9430A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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