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NCV7356D1G

Onsemi

NCV7356D1G by Onsemi

Onsemi's NCV7356D1G is an AEC-Q100 compliant network interface IC with 8 terminals, operating at -40 to 125 °C. It features a supply voltage range of 5-27V, data rate of 0.1 Mbps, and is ideal for automotive applications requiring robust interface circuitry.

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Lifecycle Status

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Digiode

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Speed Components Ltd

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LIBRA Elektronik GmbH

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Classic Components Corporation

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AZTECH Wire

Italy . 546 parts In-Stock

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TANS Electronics

Latvia . 7,683 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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Problanco Electronics

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Corphita

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Overview

Enhance your automotive electronic systems with the NCV7356D1G by Onsemi. This high-quality network interface IC offers unparalleled reliability and performance, thanks to Onsemi's reputation for excellence in semiconductor manufacturing. With a wide range of applications in automotive communication networks, this product provides customers with increased efficiency, seamless connectivity, and advanced functionality. Trust Onsemi's expertise and experience to deliver exceptional value and benefits to your projects with the NCV7356D1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on PCBs, saving time and effort.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making it suitable for automotive applications where robust performance is required.

Power Supplies (V): 5/27

The product can operate within a wide power supply range, providing flexibility and compatibility with different systems.

No. of Terminals: 8

Having 8 terminals allows for multiple connections and functions, increasing the versatility and functionality of the product.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and maintain optimal performance.

Minimum Operating Temperature: -40 °C

The ability to operate at a low temperature ensures reliable performance in cold environments, making it suitable for a wide range of applications.

Terminal Finish: Tin (Sn)

The tin terminal finish provides good electrical conductivity and corrosion resistance, ensuring long-term reliability and performance.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that the product is designed to withstand automotive-specific temperature requirements, making it ideal for automotive applications.

Data Rate: 0.1 Mbps

The data rate of 0.1 Mbps ensures fast and efficient data transfer, making it suitable for applications that require quick communication.

Technical Specifications

Network Interfaces NCV7356D1G attributes and parameters. Explore more Network Interfaces devices from Onsemi

Specs

Data Rate:

.1 Mbps

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Transceivers:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/27

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Network Interfaces

Nominal Supply Voltage:

16 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

NCV7356D1G Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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