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NCP803SN293T1

Onsemi

NCP803SN293T1 by Onsemi

NCP803SN293T1 by Onsemi is a Power Management IC with 3.3V nominal voltage, 1.5/5V power supplies, and +2.93V threshold voltage. It is used in industrial applications for power supply support circuits due to its small outline package style and wide operating temperature range from -40 °C to 105°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 102,500 parts In-Stock

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Vyrian

USA . 6,608 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 164 parts In-Stock

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$8.360

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QUARKTWIN TECHNOLOGY LTD

USA . 19,802 parts In-Stock

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SupplyDigital Components

Austria . 5,412 parts In-Stock

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Problanco Electronics

Mexico . 2,466 parts In-Stock

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TANS Electronics

Latvia . 2,452 parts In-Stock

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Corphita

USA . 1,394 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 800 parts In-Stock

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Kulean Microsystems

USA . 714 parts In-Stock

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Kepictronics

USA . 700 parts In-Stock

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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South Africa . 476 parts In-Stock

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Microchip USA

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Vigor

Singapore . 250 parts In-Stock

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Overview

Discover the NCP803SN293T1 by Onsemi, a top-quality Power Management IC designed to meet your needs with precision and reliability. Manufactured by Onsemi, a leader in the industry, this product offers exceptional value and benefits for various applications. With its compact design and advanced features, this Power Management IC ensures optimal performance and efficiency, making it the perfect choice for your power supply support circuit needs. Experience the advantages of Onsemi's superior technology with the NCP803SN293T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing manufacturing time and costs.

Nominal Supply Voltage (Vsup): 3.3 V

Compatible with a wide range of electronic devices that operate at this voltage, providing versatility.

Power Supplies (V): 1.5/5

Supports multiple power supply options, offering flexibility in design and application.

Maximum Operating Temperature: 105 °C

Ensures reliable performance even in high-temperature environments, ideal for industrial applications.

Terminal Finish: Tin/Lead (Sn80Pb20)

Provides excellent solderability and conductivity for secure connections during assembly.

Width (mm): 1.3 mm

Compact size saves space on the PCB, allowing for more components to be integrated within a limited area.

Minimum Supply Voltage (Vsup): 1.2 V

Supports low voltage operation, enabling energy-efficient performance in portable electronic devices.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures that the product can withstand the reflow soldering process without compromising its functionality.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring long-term reliability and durability.

Maximum Supply Current (Isup): 0.0025 mA

Low power consumption helps in reducing overall energy usage and extends battery life in portable devices.

Terminal Pitch: 0.95 mm

Optimal spacing between terminals facilitates easy and accurate soldering during PCB assembly.

Maximum Supply Voltage (Vsup): 5.5 V

Suitable for applications requiring higher voltage inputs, providing versatility and compatibility.

Technical Specifications

Power Management ICs NCP803SN293T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.93V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Length:

2.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

1.5/5

Qualification:

Not Qualified

Maximum Seated Height:

1.11 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0025 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.93V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.3 mm

Trade Compliance

NCP803SN293T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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