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NCP5901EMNTBG

Onsemi

NCP5901EMNTBG by Onsemi

NCP5901EMNTBG by Onsemi is a MOSFET gate driver with 4.5-13.2V power supplies, operating from -20 to 125 °C. It features a small outline package, surface mountable, and suitable for half bridge based applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,154 parts In-Stock

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Digiode

USA . 1,465 parts In-Stock

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1,465

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Distributors (Availability)

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AZTECH Wire

Italy . 1,214 parts In-Stock

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$10.060

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Component Stockers USA

USA . 717 parts In-Stock

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$99.990

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717

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Kulean Microsystems

USA . 7,661 parts In-Stock

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Problanco Electronics

Mexico . 3,767 parts In-Stock

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TANS Electronics

Latvia . 2,494 parts In-Stock

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SupplyDigital Components

Austria . 1,352 parts In-Stock

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UHIMA Technologies

Türkiye . 438 parts In-Stock

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438

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Corphita

USA . 349 parts In-Stock

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349

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Microchip USA

USA . 340 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Unlock the power of efficient and reliable gate driving with the NCP5901EMNTBG by Onsemi. This high-quality MOSFET gate driver offers unparalleled performance and durability, making it the ideal choice for a wide range of applications. From industrial automation to power electronics, this product delivers exceptional value, benefits, and advantages to customers looking for a cutting-edge solution. Trust in Onsemi's reputation for excellence and innovation, and experience the difference with the NCP5901EMNTBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body ensures durability and reliability in various operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and simplifying the manufacturing process.

Power Supplies (V): 4.5/13.2

The wide range of power supply voltages supported (4.5V to 13.2V) makes this MOSFET gate driver versatile and compatible with different applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting to other components, enabling more complex circuit designs and functionality.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this gate driver can withstand high temperature environments and ensure stable performance.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20 °C allows for use in a wide range of environments, from cold to hot conditions.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge based MOSFET driver interface IC type offers efficient switching control for MOSFETs, making it suitable for high-power applications requiring precise control.

Technical Specifications

MOSFET Gate Drivers NCP5901EMNTBG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/13.2

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NCP5901EMNTBG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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