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NCP5901BEMNTBG

Onsemi

NCP5901BEMNTBG by Onsemi

NCP5901BEMNTBG by Onsemi is a MOSFET gate driver with 4.5-13.2V power supplies, operating from -20 to 125 °C. It features a half bridge-based interface IC type in an 8-terminal small outline package for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 13,188 parts In-Stock

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13,188

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Digiode

USA . 1,445 parts In-Stock

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1,445

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Vigor

Singapore . 177 parts In-Stock

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$0.290

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177

$0.290

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AZTECH Wire

Italy . 635 parts In-Stock

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$21.000

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635

$21.000

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Component Stockers USA

USA . 409 parts In-Stock

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$99.990

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409

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TANS Electronics

Latvia . 7,427 parts In-Stock

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Problanco Electronics

Mexico . 5,626 parts In-Stock

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Kulean Microsystems

USA . 4,236 parts In-Stock

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Microchip USA

USA . 4,007 parts In-Stock

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SupplyDigital Components

Austria . 2,685 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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371

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Corphita

USA . 162 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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Overview

Elevate your electronics design with the NCP5901BEMNTBG MOSFET Gate Driver by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by engineers worldwide. This versatile driver is perfect for a wide range of applications, offering seamless power supply integration and precise control. Experience the value and benefits of this high-performance component, designed to enhance efficiency and optimize performance in your projects. Choose Onsemi for innovative solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Surface Mount: YES

Allows for easy installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Provides a standard shape that is easy to work with and fits well on PCB layouts.

Power Supplies (V): 4.5/13.2

Offers a wide range of power supply compatibility for different applications.

No. of Terminals: 8

Provides multiple connection points for enhanced connectivity and stability.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB and allows for efficient placement.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for demanding environments.

Minimum Operating Temperature: -20 °C

Can operate in cold temperatures, ensuring functionality in a variety of conditions.

Terminal Finish: TIN

Tin finish provides corrosion resistance and reliable solder joints.

Terminal Position: DUAL

Dual terminal positions offer flexibility in connection options and redundancy.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration, ensuring proper soldering.

Peak Reflow Temperature °C: 260

High reflow temperature capability for reliable soldering and robust connections.

Terminal Form: NO LEAD

Lead-free terminals conform to environmental regulations and are safer for handling.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for precise connections and space-saving on the PCB.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Advanced IC design for efficient control and driving of MOSFETs, ensuring optimal performance.

Technical Specifications

MOSFET Gate Drivers NCP5901BEMNTBG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

Interface IC Type:

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/13.2

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NCP5901BEMNTBG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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