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NCP5359MNR2G

Onsemi

NCP5359MNR2G by Onsemi

NCP5359MNR2G by Onsemi is a MOSFET Gate Driver with 10 terminals, operating voltage range of 10-13.2V, and small outline package style. It features a half bridge based interface IC type, suitable for high side driver applications in electronics requiring precise power control at temperatures up to 85 °C.

Median Price

$0.305

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 134,110 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

134,110

-

$0.317

$0.263

$0.235

Verical

USA . 117,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.293

117,000

-

-

-

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,176 parts In-Stock

1+ parts

$0.247

100+ parts

-

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1,176

$0.247

-

-

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Vyrian

USA . 5,161 parts In-Stock

1+ parts

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5,161

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Prism Electronics

USA . 603 parts In-Stock

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603

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 871 parts In-Stock

1+ parts

$0.234

100+ parts

-

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871

$0.234

-

-

-

Vigor

Singapore . 593 parts In-Stock

1+ parts

$0.250

100+ parts

-

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593

$0.250

-

-

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Corohmni

South Africa . 410 parts In-Stock

1+ parts

$0.260

100+ parts

-

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-

410

$0.260

-

-

-

Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$8.712

100+ parts

$7.928

1k+ parts

$7.144

10k+ parts

-

3,000

$8.712

$7.928

$7.144

-

AZTECH Wire

Italy . 60 parts In-Stock

1+ parts

$16.490

100+ parts

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60

$16.490

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Continental Prestige Electronics

USA . 134,110 parts In-Stock

1+ parts

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100+ parts

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$0.263

10k+ parts

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134,110

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-

$0.263

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QUARKTWIN TECHNOLOGY LTD

USA . 24,749 parts In-Stock

1+ parts

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24,749

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Microchip USA

USA . 7,967 parts In-Stock

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7,967

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TANS Electronics

Latvia . 7,265 parts In-Stock

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7,265

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Problanco Electronics

Mexico . 6,151 parts In-Stock

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6,151

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Kulean Microsystems

USA . 5,891 parts In-Stock

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5,891

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A-Z Elektronik GmbH

Germany . 5,510 parts In-Stock

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5,510

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Perfect Parts

USA . 3,360 parts In-Stock

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3,360

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SupplyDigital Components

Austria . 2,243 parts In-Stock

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2,243

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Metaverse IC Inc.

Canada . 2,110 parts In-Stock

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2,110

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Kepictronics

USA . 2,078 parts In-Stock

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2,078

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Futuretech Components

Singapore . 687 parts In-Stock

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687

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UHIMA Technologies

Türkiye . 299 parts In-Stock

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299

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GreenTree Electronics

Israel . 80 parts In-Stock

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80

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Authorized Procurement Solutions

USA . 80 parts In-Stock

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80

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Overview

Unleash the power of innovation with the NCP5359MNR2G by Onsemi. As a leading manufacturer in MOSFET Gate Drivers, Onsemi delivers top-quality products that guarantee reliability and performance. This surface mount driver is designed for a wide range of applications, offering customers seamless integration and enhanced functionality. With a maximum supply voltage of 13.2 V and a compact square package shape, this driver provides unrivaled value and efficiency. Elevate your projects with the NCP5359MNR2G and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, saving space and reducing overall system size.

Maximum Supply Voltage: 13.2 V

Can handle higher voltage inputs, providing flexibility and compatibility with a wide range of power supply options.

Package Shape: SQUARE

Square package shape is typically more compact and allows for efficient use of PCB space.

Power Supplies (V): 12

Designed for use with 12V power supplies, ensuring compatibility and optimal performance.

No. of Terminals: 10

Having multiple terminals allows for easy connections and integration within a circuit.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

Slim and compact package style saves space on the PCB and enables designs with tight constraints.

Minimum Supply Voltage: 10 V

Can operate with lower supply voltages, offering versatility in power supply options.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, providing reliability and durability in harsh environments.

Minimum Operating Temperature: 0 °C

Can operate at low temperatures, making it suitable for a wide range of operating conditions.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and resistance to corrosion, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in mounting and connecting the device in various configurations.

Maximum Seated Height: 1 mm

Low seated height enables a compact and space-saving design on the PCB.

Width: 3 mm

Narrow width allows for efficient use of space on the PCB and easy integration into tight layouts.

High Side Driver: YES

High side driver capability allows for controlling the voltage on the load side, offering flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient duration during manufacturing processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly processes, ensuring reliability.

Length: 3 mm

Compact length allows for space-efficient placement on the PCB and streamlined design.

Terminal Form: NO LEAD

No-lead terminal form simplifies assembly processes and reduces the risk of soldering errors.

Nominal Supply Voltage: 12 V

Designed for use with a common 12V supply voltage, ensuring compatibility with standard power sources.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for precise connections and saves space on the PCB.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Utilizes a half-bridge based MOSFET driver interface, offering efficient and reliable control of MOSFETs in various applications.

Technical Specifications

MOSFET Gate Drivers NCP5359MNR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-XDSO-N10

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

NCP5359MNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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