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NCP5351DR2

Onsemi

NCP5351DR2 by Onsemi

NCP5351DR2 by Onsemi is a MOSFET Gate Driver with 5V power supply, 4A output peak current limit, and 0.08us turn-on time. It is used for high side driver applications in compact electronic systems requiring fast switching speeds.

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5

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Component Electronics Inc.

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AZTECH Wire

Italy . 557 parts In-Stock

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Component Stockers USA

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Microchip USA

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SupplyDigital Components

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Kulean Microsystems

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Overview

Enhance the performance of your MOSFET applications with the NCP5351DR2 by Onsemi. Known for their high-quality products, Onsemi's MOSFET gate driver offers superior reliability and efficiency, making it ideal for a wide range of power supply and motor control applications. With a nominal output peak current limit of 4A and a fast turn-on time of 0.08 us, this compact driver ensures optimal functionality and precision. Say goodbye to downtime and hello to seamless operation with the NCP5351DR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Surface mount capability makes installation and assembly easier and more efficient.

Power Supplies (V): 5

Operating at 5 volts allows for compatibility with various systems and devices.

No. of Terminals: 8

Having 8 terminals provides versatility and flexibility in connections and configurations.

High Side Driver: YES

High side driver capability allows for precise control and management of power distribution.

Nominal Output Peak Current Limit: 4 A

A high output peak current limit of 4 A ensures efficient and reliable performance under demanding conditions.

Turn-on Time: 0.08 us

Fast turn-on time of 0.08 us ensures quick and responsive operation.

Turn-off Time: 0.037 us

Ultra-fast turn-off time of 0.037 us minimizes power loss and enhances efficiency.

Technical Specifications

MOSFET Gate Drivers NCP5351DR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Nominal Output Peak Current Limit:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.037 us

Turn-on Time:

.08 us

Width:

3.9 mm

Trade Compliance

NCP5351DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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