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NCP4350DR2G

Onsemi

NCP4350DR2G by Onsemi

NCP4350DR2G by Onsemi is a Power Management IC with 12V nominal voltage, 16 terminals, and 1.75mm seated height. It is used in power supply support circuits for applications requiring a compact small outline package design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,461 parts In-Stock

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Digiode

USA . 968 parts In-Stock

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Andel Nordic

Denmark . 3,339 parts In-Stock

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$0.880

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$0.613

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$0.613

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$0.613

AZTECH Wire

Italy . 1,196 parts In-Stock

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$17.890

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Component Stockers USA

USA . 536 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 5,521 parts In-Stock

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TANS Electronics

Latvia . 5,368 parts In-Stock

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Corphita

USA . 1,488 parts In-Stock

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Kulean Microsystems

USA . 1,206 parts In-Stock

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SupplyDigital Components

Austria . 748 parts In-Stock

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UHIMA Technologies

Türkiye . 739 parts In-Stock

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Microchip USA

USA . 448 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Overview

Discover the NCP4350DR2G by Onsemi, a top-of-the-line Power Management IC designed for optimal performance and efficiency. With Onsemi's reputation for quality and innovation, this product offers unmatched reliability and precision in power supply support circuits. Ideal for a wide range of applications, this compact and versatile IC delivers exceptional value to customers seeking superior power management solutions. Experience the benefits of seamless integration, high performance, and reliability with the NCP4350DR2G. Elevate your power management capabilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and cost-effectiveness, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Nominal Supply Voltage (Vsup): 12 V

Operating at a nominal supply voltage of 12V ensures compatibility with a variety of systems and devices that require this voltage level.

No. of Terminals: 16

Having 16 terminals provides flexibility for connecting various components and peripherals to the power management IC, enhancing versatility and customization options.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and allows for efficient placement within tight layouts or constrained environments.

Minimum Supply Voltage (Vsup): 4 V

Being able to operate at a minimum supply voltage of 4V ensures compatibility with low-power systems and devices, offering flexibility in usage scenarios.

Terminal Pitch: 1.27 mm

The small terminal pitch of 1.27mm enables high-density mounting on the circuit board, facilitating compact designs and optimizing board space usage.

Maximum Supply Voltage (Vsup): 16 V

With a maximum supply voltage of 16V, the power management IC can handle a wide range of input voltages, providing versatility in compatibility with different power sources.

Adjustable Threshold: YES

The ability to adjust the threshold allows for fine-tuning and customization of the power management settings, enabling tailored performance for specific application requirements.

Technical Specifications

Power Management ICs NCP4350DR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

2 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NCP4350DR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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