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NCP451FCCT2G

Onsemi

NCP451FCCT2G by Onsemi

NCP451FCCT2G by Onsemi is a Power Management IC with 6 terminals, operating b/w -40 to 85 °C. It supports supply voltages from 0.75V to 5.5V and has a very thin profile package suitable for power supply circuits in various applications. The rectangular plastic/epoxy package with bottom terminal position and ball form is surface mountable, making it versatile for different designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,916 parts In-Stock

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Digiode

USA . 775 parts In-Stock

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775

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SupplyDigital Components

Austria . 4,331 parts In-Stock

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TANS Electronics

Latvia . 4,317 parts In-Stock

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Problanco Electronics

Mexico . 3,158 parts In-Stock

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Kulean Microsystems

USA . 2,735 parts In-Stock

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Corphita

USA . 2,162 parts In-Stock

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UHIMA Technologies

Türkiye . 723 parts In-Stock

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Corohmni

South Africa . 309 parts In-Stock

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Overview

Discover the NCP451FCCT2G by Onsemi, a top-quality Power Management IC perfect for a wide range of applications. Manufactured with precision and expertise by Onsemi, this product offers unparalleled value and benefits to customers looking for efficient power supply support circuits. With its compact size, high reliability, and superior performance, the NCP451FCCT2G is the ideal choice for your power management needs. Trust Onsemi to deliver excellence in every aspect of their products, making them a leader in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is lightweight and durable, making the product suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs.

Nominal Supply Voltage (Vsup): 3.6 V

The nominal supply voltage of 3.6V ensures stable and efficient power management within the specified range.

No. of Terminals: 6

Having 6 terminals provides flexibility in connecting various components and peripherals.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the product can withstand high-temperature environments without compromising performance.

Maximum Seated Height: 0.5 mm

The low seated height of 0.5mm enables compact designs and facilitates efficient heat dissipation.

Terminal Form: BALL

The ball terminal form ensures reliable electrical connections and ease of soldering during assembly.

Technical Specifications

Power Management ICs NCP451FCCT2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PBGA-B6

Length:

1.4 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA6,2X3,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.5 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

.75 V

Nominal Supply Voltage (Vsup):

3.6 V

Surface Mount:

YES

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

.9 mm

Trade Compliance

NCP451FCCT2G Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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