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NCP4371ACCDR2G

Onsemi

NCP4371ACCDR2G by Onsemi

NCP4371ACCDR2G by Onsemi is a Power Management IC with 8 terminals, operating b/w -40 to 125 °C. It supports supply voltages from 2.2V to 28V and has an adjustable threshold at 5V. Ideal for automotive applications due to its small outline package and gull wing terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,492 parts In-Stock

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Vyrian

USA . 54 parts In-Stock

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Kulean Microsystems

USA . 7,338 parts In-Stock

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TANS Electronics

Latvia . 6,288 parts In-Stock

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Problanco Electronics

Mexico . 5,677 parts In-Stock

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SupplyDigital Components

Austria . 5,241 parts In-Stock

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Corphita

USA . 2,458 parts In-Stock

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UHIMA Technologies

Türkiye . 781 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Unlock the power of efficient energy management with the NCP4371ACCDR2G by Onsemi. As a leading manufacturer of Power Management ICs, Onsemi delivers superior quality and reliability in every product. Ideal for a wide range of applications, this power supply support circuit offers customers unmatched value and benefits. With features like adjustable threshold and a wide operating temperature range, the NCP4371ACCDR2G provides convenience and peace of mind to users. Upgrade your energy management system today with Onsemi's innovative solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ensuring reliability in various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage (Vsup): 5 V

Operating at a nominal supply voltage of 5V provides compatibility with a wide range of systems and devices.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade ensures that the power management IC can withstand harsh environmental conditions often present in automotive applications.

Adjustable Threshold: YES

Having an adjustable threshold allows for customizable voltage settings, providing flexibility for different power management requirements.

Technical Specifications

Power Management ICs NCP4371ACCDR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

28 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.9 mm

Trade Compliance

NCP4371ACCDR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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