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NCP308MT190TBG

Onsemi

NCP308MT190TBG by Onsemi

NCP308MT190TBG by Onsemi is a Power Management IC with Vsup of 3.3V, suitable for automotive applications. It features a small outline package style, matte tin terminal finish, and operates b/w -40 to 125 °C. With adjustable threshold voltage and low supply current, it's ideal for power supply support circuits in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,564 parts In-Stock

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Digiode

USA . 2,240 parts In-Stock

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Microchip USA

USA . 5,386 parts In-Stock

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$2.924

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AZTECH Wire

Italy . 1,028 parts In-Stock

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$13.810

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Kepictronics

USA . 30,000 parts In-Stock

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SupplyDigital Components

Austria . 8,071 parts In-Stock

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TANS Electronics

Latvia . 8,070 parts In-Stock

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Kulean Microsystems

USA . 6,647 parts In-Stock

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RC Electronics

USA . 6,300 parts In-Stock

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Problanco Electronics

Mexico . 4,044 parts In-Stock

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Corphita

USA . 1,293 parts In-Stock

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Corohmni

South Africa . 287 parts In-Stock

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UHIMA Technologies

Türkiye . 182 parts In-Stock

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Overview

Discover the cutting-edge NCP308MT190TBG by Onsemi, a top-tier Power Management IC designed to optimize energy efficiency and performance. Manufactured with precision and expertise by Onsemi, this innovative product is perfect for a wide range of applications in automotive and industrial sectors. Experience seamless power management with this state-of-the-art solution, offering unmatched reliability and quality. Elevate your projects with the NCP308MT190TBG and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on a printed circuit board, saving space and simplifying the manufacturing process.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3V ensures compatibility with a wide range of power sources, providing stability and reliability to the device.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this power management IC can withstand extreme conditions and maintain performance under stress.

Technology: CMOS

The CMOS technology enables low power consumption and high noise immunity, making this power management IC efficient and reliable in various applications.

Technical Specifications

Power Management ICs NCP308MT190TBG attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

THRESHOLD VOLTAGE IS 1.77V

Adjustable Threshold:

YES

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.08,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.6/5.5

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.006 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.6 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.9V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

2 mm

Trade Compliance

NCP308MT190TBG Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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