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NCP304LSQ35T1G

Onsemi

NCP304LSQ35T1G by Onsemi

NCP304LSQ35T1G by Onsemi is a Power Management IC with a package style of Small Outline, Thin Profile. It operates b/w -40 to 85 °C and has a nominal threshold voltage of +3.5V. Ideal for power supply support circuits in industrial applications due to its compact size and wide operating temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,300 parts In-Stock

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Digiode

USA . 798 parts In-Stock

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Vigor

Singapore . 960 parts In-Stock

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$0.200

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960

$0.200

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AZTECH Wire

Italy . 929 parts In-Stock

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$8.350

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QUARKTWIN TECHNOLOGY LTD

USA . 13,831 parts In-Stock

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Kulean Microsystems

USA . 7,639 parts In-Stock

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Problanco Electronics

Mexico . 5,030 parts In-Stock

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Microchip USA

USA . 4,295 parts In-Stock

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Corphita

USA . 1,557 parts In-Stock

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TANS Electronics

Latvia . 1,520 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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SupplyDigital Components

Austria . 27 parts In-Stock

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Overview

Enhance your power management capabilities with the NCP304LSQ35T1G by Onsemi. Designed with precision and reliability in mind, this Power Management IC offers seamless performance for a wide range of applications. With a focus on quality and innovation, Onsemi ensures that their products meet the highest standards, providing customers with a reliable solution for their power supply support circuit needs. Experience the value and benefits that this product brings to your projects, from its small outline and thin profile package style to its industrial-grade temperature tolerance. Upgrade your power management system with Onsemi's NCP304LSQ35T1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the internal components of the IC, making it a reliable choice for power management applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the IC onto PCBs, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact footprint, making it suitable for applications where space is limited.

No. of Terminals: 4

Having a small number of terminals simplifies the design and assembly process, reducing complexity and potential points of failure.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the IC to function reliably in a wide range of environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the IC can operate effectively in cold environments without any issues.

Nominal Threshold Voltage (V): +3.5V

Having a specific threshold voltage helps in accurately triggering the power management functions of the IC, ensuring optimal performance.

Technical Specifications

Power Management ICs NCP304LSQ35T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP4,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.3 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.5V

Width (mm):

1.25 mm

Trade Compliance

NCP304LSQ35T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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