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NCP303LSN30T1

Onsemi

NCP303LSN30T1 by Onsemi

NCP303LSN30T1 by Onsemi is a Power Management IC with 5 terminals, operating from -40 to 125 °C. It supports supply voltages from 0.8V to 10V and has a threshold voltage of +3V. Ideal for automotive applications due to its small size and low supply current of 0.0013 mA.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Chip Stock

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Digiode

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ComSIT Distribution GmbH

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Semi Source

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Prism Electronics

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AZTECH Wire

Italy . 292 parts In-Stock

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Component Stockers USA

USA . 682 parts In-Stock

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$99.990

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RC Electronics

USA . 150,000 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 3,934 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 876 parts In-Stock

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Vigor

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Overview

Enhance your power management solutions with the NCP303LSN30T1 by Onsemi. This high-quality Power Management IC not only boasts reliability and durability as a product of Onsemi, a renowned manufacturer in the industry, but also offers a wide range of applications for various projects. With its small outline and thin profile package style, this IC is perfect for automotive use, ensuring optimal performance even in extreme temperatures. Experience the value and benefits of this innovative technology, providing customers with efficiency and peace of mind in their power supply support circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring reliability in various operating conditions.

Surface Mount: YES

Being surface mountable, this IC is easy to install on PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5V provides a stable power source for the IC, ensuring proper and consistent functionality.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this IC can withstand elevated temperatures, making it suitable for demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC efficient and reliable for power management applications.

Technical Specifications

Power Management ICs NCP303LSN30T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.0V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3V

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN30T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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