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NCP303LSN27T1

Onsemi

NCP303LSN27T1 by Onsemi

NCP303LSN27T1 by Onsemi is a Power Management IC with Vsup of 1.5V, suitable for automotive applications. It has 5 terminals, operates b/w -40 to 125 °C, and supports supply voltage from 0.8V to 10V. The small outline package measures 3x1.5mm with a seated height of 1.1mm, making it ideal for space-constrained designs.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 22 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

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22

$0.770

$0.580

$0.500

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Chip Stock

USA . 222,500 parts In-Stock

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222,500

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Vyrian

USA . 5,530 parts In-Stock

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5,530

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NAC Semi

USA . 2,359 parts In-Stock

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2,359

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Digiode

USA . 485 parts In-Stock

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485

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MISTER SPROCKETS

USA . 250 parts In-Stock

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250

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Distributors (Availability)

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Vigor

Singapore . 961 parts In-Stock

1+ parts

$0.190

100+ parts

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961

$0.190

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Corohmni

South Africa . 350 parts In-Stock

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$0.770

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350

$0.770

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AZTECH Wire

Italy . 739 parts In-Stock

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$18.430

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739

$18.430

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RC Electronics

USA . 54,000 parts In-Stock

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54,000

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SupplyDigital Components

Austria . 5,893 parts In-Stock

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Problanco Electronics

Mexico . 4,603 parts In-Stock

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Corphita

USA . 1,868 parts In-Stock

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1,868

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TANS Electronics

Latvia . 1,360 parts In-Stock

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1,360

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Kulean Microsystems

USA . 699 parts In-Stock

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699

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Microchip USA

USA . 404 parts In-Stock

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Kepictronics

USA . 150 parts In-Stock

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UHIMA Technologies

Türkiye . 13 parts In-Stock

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Overview

Enhance your power management capabilities with the NCP303LSN27T1 by Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for a wide range of applications. This Power Management IC is designed to provide optimal performance and efficiency, making it a valuable addition to any project. With its compact design and advanced technology, this IC offers unparalleled benefits and advantages to customers looking to optimize their power supply support circuits. Trust Onsemi to deliver cutting-edge solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and cost-effectiveness, making the product reliable and affordable.

Surface Mount: YES

Being surface mountable allows for easy and secure installation on circuit boards, saving space and enhancing efficiency.

Nominal Supply Voltage (Vsup): 1.5 V

The nominal supply voltage of 1.5 V ensures consistent and stable power delivery to the connected devices.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it efficient and reliable in various applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, the product can withstand rigorous operating conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The wide range of operating temperature from -40 to 125 °C ensures the product can function reliably in a variety of environments.

Terminal Finish: TIN LEAD

The TIN LEAD terminal finish provides good solderability and reliable electrical connections, improving the overall quality of the product.

Width (mm): 1.5 mm

The compact width of 1.5 mm enables the product to fit into tight spaces and reduces the overall size of the circuit design.

Technical Specifications

Power Management ICs NCP303LSN27T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.7V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.7V

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN27T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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