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NCP303LSN23T1

Onsemi

NCP303LSN23T1 by Onsemi

NCP303LSN23T1 by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 °C to 125°C. This CMOS technology IC supports power supply circuits in compact designs.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 730 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

730

-

$0.119

$0.099

$0.088

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,061 parts In-Stock

1+ parts

$0.093

100+ parts

-

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2,061

$0.093

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Vyrian

USA . 6,269 parts In-Stock

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6,269

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Distributors (Availability)

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Corphita

USA . 279 parts In-Stock

1+ parts

$0.088

100+ parts

-

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279

$0.088

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Vigor

Singapore . 973 parts In-Stock

1+ parts

$0.090

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-

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973

$0.090

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Corohmni

South Africa . 169 parts In-Stock

1+ parts

$0.098

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169

$0.098

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Component Stockers USA

USA . 977 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

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977

$0.100

$0.090

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-

AZTECH Wire

Italy . 750 parts In-Stock

1+ parts

$11.700

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750

$11.700

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SupplyDigital Components

Austria . 4,707 parts In-Stock

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4,707

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Microchip USA

USA . 4,242 parts In-Stock

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4,242

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TANS Electronics

Latvia . 4,092 parts In-Stock

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4,092

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Kulean Microsystems

USA . 1,146 parts In-Stock

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1,146

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Problanco Electronics

Mexico . 683 parts In-Stock

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683

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UHIMA Technologies

Türkiye . 431 parts In-Stock

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431

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Overview

Unlock the power of efficient energy management with the NCP303LSN23T1 by Onsemi. As a leader in Power Management ICs, Onsemi delivers top-quality products that cater to a wide range of applications. This small outline, thin profile IC offers a nominal supply voltage of 1.5V and a minimum supply voltage of 0.8V, making it ideal for automotive use. With a temperature grade of automotive and a maximum operating temperature of 125 °C, this IC ensures reliable performance even in harsh conditions. Experience the benefits of superior technology and precision engineering with the NCP303LSN23T1, providing customers with unmatched value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the Power Management IC.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.5 V

Offers a stable and consistent voltage supply for the connected devices, ensuring reliable performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without compromising functionality, making it suitable for various applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing efficiency and reliability.

Technical Specifications

Power Management ICs NCP303LSN23T1 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 2.3V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.3V

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN23T1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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