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NCP303LSN13T1G

Onsemi

NCP303LSN13T1G by Onsemi

NCP303LSN13T1G by Onsemi is a Power Management IC with Vsup of 1.5V, V range of 0.8-10V, and T grade for automotive applications. It has 5 terminals in a small outline package suitable for surface mount assembly, operating b/w -40 to 125 °C. This CMOS technology IC supports power supplies with a threshold voltage of +1.3V and low supply current of 0.0012mA.

Median Price

$0.223

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 24 parts In-Stock

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$0.036

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$0.036

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Rochester

USA . 53,541 parts In-Stock

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$0.241

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$0.200

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$0.178

53,541

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$0.178

Verical

USA . 51,000 parts In-Stock

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$0.223

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Flip Electronics (Authorized)

USA . 3,401 parts In-Stock

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Chip1Stop

Japan . 24 parts In-Stock

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Digiode

USA . 2,199 parts In-Stock

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$0.034

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$0.034

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ComSIT Distribution GmbH

Germany . 11,415 parts In-Stock

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ComSIT USA

USA . 11,415 parts In-Stock

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Vyrian

USA . 4,161 parts In-Stock

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USA . 3,401 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Odintec Ltd.

Israel . 773 parts In-Stock

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Prism Electronics

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Corphita

USA . 1,405 parts In-Stock

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$0.032

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$0.032

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Corohmni

South Africa . 164 parts In-Stock

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$0.070

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$0.070

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Component Stockers USA

USA . 36,504 parts In-Stock

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$0.170

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$0.190

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$0.170

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$0.170

36,504

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$0.190

$0.170

$0.170

Vigor

Singapore . 150 parts In-Stock

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$0.630

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AZTECH Wire

Italy . 1,144 parts In-Stock

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$20.810

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Continental Prestige Electronics

USA . 52,624 parts In-Stock

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RC Electronics

USA . 16,200 parts In-Stock

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Perfect Parts

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TANS Electronics

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SupplyDigital Components

Austria . 4,971 parts In-Stock

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GreenTree Electronics

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Futuretech Components

Singapore . 693 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Microchip USA

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UHIMA Technologies

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Overview

Enhance your power management solutions with the NCP303LSN13T1G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that cater to a wide range of applications. With its compact size and advanced technology, this IC offers unparalleled reliability and efficiency. Trust Onsemi to provide you with the best-in-class products that will meet your power supply support circuit needs. Choose the NCP303LSN13T1G for high performance and superior functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy assembly onto circuit boards, saving time and reducing complexity in manufacturing processes.

Nominal Supply Voltage (Vsup): 1.5 V

A stable supply voltage of 1.5V ensures consistent performance and reliable operation of the power management IC.

Power Supplies (V): 0.8/10

Wide range of power supplies (0.8V to 10V) makes the IC versatile and compatible with various input voltage levels.

No. of Terminals: 5

Having 5 terminals allows for easy connectivity with other components in the circuit, enhancing overall functionality.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the IC can withstand extreme conditions, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity, ensuring reliable connections and electrical performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the IC energy-efficient and reliable in noisy environments.

Technical Specifications

Power Management ICs NCP303LSN13T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 1.3V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0012 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+1.3V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP303LSN13T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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