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NCP302LSN38T1G

Onsemi

NCP302LSN38T1G by Onsemi

NCP302LSN38T1G by Onsemi is a Power Management IC with Vsup ranging from 0.8V to 10V, suitable for automotive applications. It features a small outline package with dual terminals and operates b/w -40 °C to 125°C. With a supply current of 0.0013mA, it supports power supply circuits efficiently.

Median Price

$0.241

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1 parts In-Stock

1+ parts

$0.960

100+ parts

-

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1

$0.960

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Rochester

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

$0.241

1k+ parts

$0.200

10k+ parts

$0.178

15,000

-

$0.241

$0.200

$0.178

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.223

15,000

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-

-

$0.223

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,056 parts In-Stock

1+ parts

$0.188

100+ parts

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2,056

$0.188

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Flip Electronics

USA . 21,000 parts In-Stock

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21,000

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Vyrian

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Corphita

USA . 1,335 parts In-Stock

1+ parts

$0.178

100+ parts

-

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1,335

$0.178

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Corohmni

South Africa . 233 parts In-Stock

1+ parts

$0.198

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233

$0.198

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Component Stockers USA

USA . 2 parts In-Stock

1+ parts

$0.580

100+ parts

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2

$0.580

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Vigor

Singapore . 900 parts In-Stock

1+ parts

$0.590

100+ parts

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900

$0.590

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Kepictronics

USA . 27,000 parts In-Stock

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Problanco Electronics

Mexico . 8,111 parts In-Stock

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SupplyDigital Components

Austria . 7,439 parts In-Stock

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7,439

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Perfect Parts

USA . 5,617 parts In-Stock

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5,617

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RC Electronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,700 parts In-Stock

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2,700

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TANS Electronics

Latvia . 886 parts In-Stock

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886

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UHIMA Technologies

Türkiye . 782 parts In-Stock

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782

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Kulean Microsystems

USA . 521 parts In-Stock

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521

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Microchip USA

USA . 179 parts In-Stock

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179

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Overview

Enhance the performance of your power management systems with the NCP302LSN38T1G by Onsemi. This top-quality Power Management IC offers unmatched reliability and efficiency, perfect for automotive applications. With a compact design and advanced technology, this IC provides a seamless integration into your products, ensuring optimal performance at all times. Trust Onsemi's expertise in manufacturing to deliver superior components that meet your power supply support circuit needs. Upgrade your systems today and experience the benefits of the NCP302LSN38T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the product lightweight and durable, perfect for applications where weight and durability are important factors.

Surface Mount: YES

The surface mount capability of the product ensures easy and convenient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 1.5 V

The low nominal supply voltage of 1.5 V allows for efficient power management and energy savings, making it suitable for low-power applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliability and performance in harsh operating conditions, making it suitable for a wide range of industrial and automotive applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows the product to operate efficiently in extreme cold environments, making it versatile for different temperature conditions.

Technology: CMOS

The CMOS technology used in the product enables low power consumption and high-speed operation, making it ideal for power management applications that require efficiency and performance.

Technical Specifications

Power Management ICs NCP302LSN38T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.8V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.8V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP302LSN38T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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