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NCP301LSN33T1G

Onsemi

NCP301LSN33T1G by Onsemi

NCP301LSN33T1G by Onsemi is a Power Management IC with Vsup of 1.5V, Isup of 0.0013mA, and V thresholds at +3.3V. Ideal for automotive applications due to its temp range -40 to 125 °C and small form factor (3x1.5mm).

Median Price

$0.241

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 245 parts In-Stock

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-

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$0.241

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$0.200

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$0.178

245

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$0.178

Distributors (In-Stock)

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Digiode

USA . 2,208 parts In-Stock

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$0.188

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Vyrian

USA . 8,299 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 848 parts In-Stock

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Bristol Electronics

USA . 848 parts In-Stock

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Dan-Mar Components

USA . 848 parts In-Stock

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ComSIT Distribution GmbH

Germany . 297 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,458 parts In-Stock

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$0.178

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Corohmni

South Africa . 476 parts In-Stock

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$0.198

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Component Stockers USA

USA . 11,728 parts In-Stock

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$0.200

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$0.190

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$0.170

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$0.170

11,728

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$0.170

Vigor

Singapore . 250 parts In-Stock

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$0.630

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$0.630

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AZTECH Wire

Italy . 655 parts In-Stock

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$13.850

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Perfect Parts

USA . 34,384 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,462 parts In-Stock

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Microchip USA

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Kepictronics

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Problanco Electronics

Mexico . 4,545 parts In-Stock

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Kulean Microsystems

USA . 3,924 parts In-Stock

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TANS Electronics

Latvia . 2,562 parts In-Stock

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SupplyDigital Components

Austria . 2,129 parts In-Stock

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UHIMA Technologies

Türkiye . 903 parts In-Stock

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Overview

Experience the superior quality and reliability of the NCP301LSN33T1G by Onsemi, a leading manufacturer in the Power Management ICs category. This versatile product offers a wide range of applications with its compact design and high-performance features. From automotive to industrial settings, customers can trust in the value and benefits that this innovative power supply support circuit provides. With a nominal threshold voltage of +3.3V and a wide operating temperature range, the NCP301LSN33T1G is the perfect choice for your power management needs. Trust in Onsemi for cutting-edge technology and unmatched customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight and cost-effective, making the product suitable for a wide range of applications while keeping manufacturing costs low.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing overall product size.

Nominal Supply Voltage (Vsup): 1.5 V

Operates efficiently at a low voltage of 1.5V, making it suitable for battery-powered devices and reducing power consumption.

Power Supplies (V): 0.8/10

Supports a wide range of power supplies from 0.8V to 10V, making it versatile and compatible with various systems.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures up to 125 °C, ensuring reliability and performance in challenging environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high noise immunity, enhancing overall efficiency and reliability.

Technical Specifications

Power Management ICs NCP301LSN33T1G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

DETECTION THRESHOLD VOLTAGE IS 3.3V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

0.8/10

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.0013 mA

Maximum Supply Voltage (Vsup):

10 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage (Vsup):

1.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.3V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

NCP301LSN33T1G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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